SiC上TiO2、Gd2O3、Er2O3、SiO2薄膜的氧化、应力、形貌、局部电阻率与光学性能的关系

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI:10.15407/spqeo26.03.260
O.B. Okhrimenko, Yu.Yu. Bacherikov, P.M. Lytvyn, O.S. Lytvyn, V.Yu. Goroneskul, R.V. Konakova
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引用次数: 0

摘要

研究了SiC衬底上TiO2、Gd2O3、Er2O3和SiO2薄膜的内部机械应力、表面形貌、纳米电学性能和光学特性之间的关系。采用快速热退火法合成了氧化膜,并通过扫描扩展电阻显微镜、光致发光和吸收光谱对氧化膜进行了分析。在薄膜中发现了拉伸应力,它们归因于热和晶格失配,氧化和晶界。这些应力影响表面形貌、电阻率变化和光致发光强度。发现表面粗糙度和晶粒结构与电阻率变化有关,这归因于沿晶界和可能的金属相的导电路径。光致发光强度也被观察到与估计的晶格失配应变相关。Gd2O3/SiC缺陷最少,Er2O3和TiO2缺陷较多,其中Er2O3缺陷最不匹配,也最粗糙。结果表明,SiC衬底上氧化薄膜的内部应变会影响表面形貌,导致缺陷和空间不均匀性的形成。这些局部电导率和发光中心密度的波动对电介质和光学应用具有重要意义。该研究为未来的加工改进提供了见解,以减轻内部应变并提高半导体和光学技术中的氧化薄膜的性能。
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Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC
The relationship between internal mechanical stresses, surface morphology, nanoscale electrical properties, and optical characteristics in TiO2, Gd2O3, Er2O3, and SiO2 thin films on SiC substrates was investigated. The oxide films were synthesized using the rapid thermal annealing and analyzed through scanning spreading resistance microscopy, photoluminescence, and absorption spectroscopy. Tensile stresses were found in the films, they are attributed to thermal and lattice mismatch, oxidation, and grain boundaries. These stresses influence on surface morphology, resistivity variations, and photoluminescence intensity. Surface roughness and grain structure were found to correlate with variations in resistivity, which were attributed to conductive pathways along grain boundaries and possible metallic phases. Photoluminescence intensity was also observed to correlate with estimated lattice mismatch strain. Gd2O3/SiC exhibited the fewest defects, while Er2O3 and TiO2 showed more, with Er2O3 being the most mismatched and roughest. The results indicate that internal strains in oxide thin films on SiC substrates can influence on surface morphology, leading to formation of defects and spatial inhomogeneity. These fluctuations in local conductivity and luminescence center density have significant implications for dielectric and optical applications. The study provides insights for future processing refinements to mitigate internal strains and enhance the performance of oxide thin films in semiconductor and optical technologies.
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
期刊最新文献
SPR chromatic sensor with colorimetric registration for detection of gas molecules Determination of scattering and Urbach absorption contributions to the light extinction in PTFE films by using graphical representation technique and numerical solution of the inverse problem Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC Preparation and ionic conductivity of Ag8GeS6-based ceramic materials Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274
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