ag8ges6基陶瓷材料的制备及其离子电导率

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI:10.15407/spqeo26.03.270
A.I. Pogodin, M.J. Filep, S. Vorobiov, V. Komanicky, T.O. Malakhovska, O.P. Kokhan, V.V. Vakulchak
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引用次数: 0

摘要

本文介绍了以不同分散度的Ag8GeS6粉末为基础制备陶瓷材料的研究结果。微晶粉的平均粒径为10 ~ 20µm,纳米粉的平均粒径为~140 nm和~180 nm。采用XRD和SEM对粉末材料进行了表征。对压片(400 MPa)进行1073 K退火,得到ag8ges6基陶瓷样品。利用扫描电镜和能谱仪对陶瓷表面进行了研究,结果表明所得陶瓷的化学成分均匀。用阻抗谱法研究了所制陶瓷在宽频率(1·101…3·105 Hz)和温度(293…383 K)范围内的电导率。对于所有这些陶瓷,导电性随频率的增加而增加。根据所得结果,测定了相应Ag8GeS6陶瓷样品的离子电导率和活化能。
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Preparation and ionic conductivity of Ag8GeS6-based ceramic materials
Herein we present the results of the study of ceramic materials made on the basis of Ag8GeS6 powders with different dispersion. The average grain size of microcrystalline powders is 10…20 µm, and that of nanocrystalline powders is ~140 and ~180 nm, respectively. The powdered materials were investigated using the XRD and SEM methods. The Ag8GeS6-based ceramic samples were obtained by annealing (1073 K) of pressed (400 MPa) discs. Investigations of the ceramics surface by using the SEM and EDS methods indicate the homogeneity of the chemical composition of the obtained ceramics. The electrical conductivity of the obtained ceramics was studied using impedance spectroscopy in a wide frequency (1·101…3·105 Hz) and temperature (293…383 K) ranges. For all these ceramics, an increase in electrical conductivity with increasing frequency is observed. Based on the obtained results, the values of ionic conductivity and activation energy of the corresponding Ag8GeS6 ceramic samples were determined.
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
期刊最新文献
SPR chromatic sensor with colorimetric registration for detection of gas molecules Determination of scattering and Urbach absorption contributions to the light extinction in PTFE films by using graphical representation technique and numerical solution of the inverse problem Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC Preparation and ionic conductivity of Ag8GeS6-based ceramic materials Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274
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