{"title":"合金化对纳米级三元半导体化合物带隙能的影响","authors":"Monika Goyal","doi":"10.1007/s10825-023-02115-8","DOIUrl":null,"url":null,"abstract":"<p>The variation in bandgap energy with decreased size and varying composition of alloys has attracted the attention of researchers over the past few decades. In the present paper, a simple unified model is presented to study the impact of alloying on the bandgap energy of ternary semiconducting compounds with varying composition. The energy bandgap is determined for semiconducting homogeneous nano-compounds with zinc-blende and wurtzite structure, including Zn<sub><i>x</i></sub>Cd<sub>1−<i>x</i></sub>S, Zn<sub><i>x</i></sub>Cd<sub>1−<i>x</i></sub>Se, Cd(S)<sub><i>x</i></sub>(Se)<sub>1−<i>x</i></sub>, and Cd(Se)<sub><i>x</i></sub>(Te)<sub>1−<i>x</i></sub>. The model does not involve any adjustable parameters. The study provides insight into the impact of size, dimension, and composition on the energy bandgap of the material and the possibility of tuning the optical properties of semiconducting compounds by alloying, as alloyed compounds could be more stable and have higher luminescence than single semiconducting nanocrystal with a narrower energy bandgap. The model predictions are in good accord with the available experimental and simulated data.</p>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of alloying on the bandgap energy in nano-sized ternary semiconducting compounds\",\"authors\":\"Monika Goyal\",\"doi\":\"10.1007/s10825-023-02115-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The variation in bandgap energy with decreased size and varying composition of alloys has attracted the attention of researchers over the past few decades. In the present paper, a simple unified model is presented to study the impact of alloying on the bandgap energy of ternary semiconducting compounds with varying composition. The energy bandgap is determined for semiconducting homogeneous nano-compounds with zinc-blende and wurtzite structure, including Zn<sub><i>x</i></sub>Cd<sub>1−<i>x</i></sub>S, Zn<sub><i>x</i></sub>Cd<sub>1−<i>x</i></sub>Se, Cd(S)<sub><i>x</i></sub>(Se)<sub>1−<i>x</i></sub>, and Cd(Se)<sub><i>x</i></sub>(Te)<sub>1−<i>x</i></sub>. The model does not involve any adjustable parameters. The study provides insight into the impact of size, dimension, and composition on the energy bandgap of the material and the possibility of tuning the optical properties of semiconducting compounds by alloying, as alloyed compounds could be more stable and have higher luminescence than single semiconducting nanocrystal with a narrower energy bandgap. The model predictions are in good accord with the available experimental and simulated data.</p>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-12-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s10825-023-02115-8\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s10825-023-02115-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Impact of alloying on the bandgap energy in nano-sized ternary semiconducting compounds
The variation in bandgap energy with decreased size and varying composition of alloys has attracted the attention of researchers over the past few decades. In the present paper, a simple unified model is presented to study the impact of alloying on the bandgap energy of ternary semiconducting compounds with varying composition. The energy bandgap is determined for semiconducting homogeneous nano-compounds with zinc-blende and wurtzite structure, including ZnxCd1−xS, ZnxCd1−xSe, Cd(S)x(Se)1−x, and Cd(Se)x(Te)1−x. The model does not involve any adjustable parameters. The study provides insight into the impact of size, dimension, and composition on the energy bandgap of the material and the possibility of tuning the optical properties of semiconducting compounds by alloying, as alloyed compounds could be more stable and have higher luminescence than single semiconducting nanocrystal with a narrower energy bandgap. The model predictions are in good accord with the available experimental and simulated data.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
