Strain engineered < Si/Si0.97C0.03 > superlattice photodetector for optoelectronic applications: a comprehensive numerical analysis and experimental verification

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-08-04 DOI:10.1007/s10825-024-02209-x

Moumita Chakraborty, Pradip Kumar Sadhu, Abhijit Kundu, Moumita Mukherjee

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Abstract

In this paper, a strain-modified Si/Si_0.97C_0.03 asymmetrical superlattice exotic type (p + -i-p-n +) avalanche photodetector has been designed for applications on the infrared wavelength region. The photoelectric characteristics of the device are studied by developing a self-consistent quantum phenomena-based drift–diffusion model in conjunction with PSpice simulator. The overall performance of the device has been boosted significantly by introducing strain engineering which enhances the out-plane mobility of the charge particles in the intrinsic/active region of the device. The strain is produced in the intrinsic/active region by inclusion of small amount of carbon (C) into the pure Si material. The proposed strain-modified exotic avalanche photodetector exhibits better performance in terms of quantum efficiency (0.671) and photo-responsivity (0.645 A/W) compared to its planer unstrained Si counterpart (quantum efficiency: 0.481, photo-responsivity: 0.524A/W) at 1800 nm wavelength. Additionally, a 3 × 4 array of photodetectors has been designed using this device and its optoelectronic properties are studied in the IR wavelength region. The superiority of the performance of the 3 × 4 array of photodetectors is established in terms of better quantum efficiency (0.872) and better photo-responsivity (0.851 A/W). The validity of quantum phenomena-based drift–diffusion model is established by comparing the simulated data with experimental findings under similar operating conditions. The developed device can be used in defense as well as biomedical industries for sensing applications.

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用于光电应用的应变工程超晶格光电探测器：全面的数值分析和实验验证

本文设计了一种应变改性硅/硅 0.97C0.03 非对称超晶格奇异型（p + -i-p-n +）雪崩光电探测器，可应用于红外波段。通过开发基于自洽量子现象的漂移扩散模型和 PSpice 仿真器，研究了该器件的光电特性。通过引入应变工程，提高了器件本征/有源区电荷粒子的平面外迁移率，从而显著提升了器件的整体性能。应变是通过在纯硅材料中加入少量碳（C）而在本征/有源区产生的。在波长为 1800 nm 的条件下，与平面非应变硅材料（量子效率：0.481，光反应率：0.524A/W）相比，所提出的应变修饰异种雪崩光电探测器在量子效率（0.671）和光反应率（0.645A/W）方面表现出更高的性能。此外，还利用该器件设计了 3 × 4 阵列光电探测器，并研究了其在红外波长区域的光电特性。3 × 4 阵列光电探测器在量子效率（0.872）和光响应率（0.851 A/W）方面的优越性得到了证实。通过将模拟数据与类似工作条件下的实验结果进行比较，确定了基于量子现象的漂移扩散模型的有效性。所开发的器件可用于国防和生物医学行业的传感应用。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.