C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard
{"title":"块状铟的 HAXPES Cr Kα 测量","authors":"C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard","doi":"10.1116/6.0003161","DOIUrl":null,"url":null,"abstract":"Indium was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of indium obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of In 2s, In 2p3/2, In 3s, In 3p3/2, In 3d, In 4s, and In 4d.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"HAXPES Cr Kα measurement of bulk indium\",\"authors\":\"C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard\",\"doi\":\"10.1116/6.0003161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Indium was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of indium obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of In 2s, In 2p3/2, In 3s, In 3p3/2, In 3d, In 4s, and In 4d.\",\"PeriodicalId\":22006,\"journal\":{\"name\":\"Surface Science Spectra\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface Science Spectra\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Science Spectra","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
摘要
利用高分辨率高能 X 射线光电子能谱（HAXPES）对铟进行了分析。使用 5414.8 eV 的单色 Cr Kα 辐射获得的铟 HAXPES 光谱包括铟 2s、铟 2p3/2、铟 3s、铟 3p3/2、铟 3d、铟 4s 和铟 4d 的勘测扫描和高分辨率光谱。
Indium was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of indium obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of In 2s, In 2p3/2, In 3s, In 3p3/2, In 3d, In 4s, and In 4d.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
