电子撞击诱导的 Ir 和 Bi M 子壳的 X 射线生成截面

IF 2.1 3区 工程技术 Q2 MICROSCOPY Ultramicroscopy Pub Date : 2024-01-24 DOI:10.1016/j.ultramic.2024.113923
M.D. Décima, G.E. Castellano, J.C. Trincavelli, A.C. Carreras
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引用次数: 0

摘要

间接测量了用单能电子束辐照的Ir和Bi靶的M子壳X射线产生截面。射弹能量范围从 2.2 到 28 keV,在扫描电子显微镜中撞击在 Ir 和 Bi 纯体靶上。由此产生的 X 射线发射光谱由能量色散光谱仪获取,然后通过之前开发的稳健参数优化程序进行处理。最后通过分析预测发射光谱的方法获得了 X 射线生成截面,该方法依赖于电离深度分布函数。利用文献中的不同弛豫数据,将这种方法获得的值与经验预测值和理论预测值进行了比较。
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X-ray production cross sections for Ir and Bi M-subshells induced by electron impact

M-subshell X-ray production cross sections were indirectly measured for Ir and Bi targets irradiated with monoenergetic electron beams. The projectile energy range ran from 2.2 to 28 keV, impinging on Ir and Bi pure bulk targets in a scanning electron microscope. The resulting X-ray emission spectra were acquired with an energy dispersive spectrometer, and processed afterwards by means of a robust parameter optimization procedure developed previously. X-ray production cross sections were finally obtained through an approach involving an analytical prediction for the emission spectra, which relies on the ionization depth distribution function. The values obtained by this approach were compared with empirical and theoretical predictions, appealing to different relaxation data taken from the literature.

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来源期刊
Ultramicroscopy
Ultramicroscopy 工程技术-显微镜技术
CiteScore
4.60
自引率
13.60%
发文量
117
审稿时长
5.3 months
期刊介绍: Ultramicroscopy is an established journal that provides a forum for the publication of original research papers, invited reviews and rapid communications. The scope of Ultramicroscopy is to describe advances in instrumentation, methods and theory related to all modes of microscopical imaging, diffraction and spectroscopy in the life and physical sciences.
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