{"title":"采用溅射 Zn0.85Mg0.15O 电子传输材料的大面积量子点发光二极管","authors":"Bomi Kim, Jiwan Kim","doi":"10.1007/s13391-023-00482-9","DOIUrl":null,"url":null,"abstract":"<div><p>We report a large-area quantum dot light-emitting diode (QLED) with sputtered Zn<sub>0.85</sub>Mg<sub>0.15</sub>O (ZMO) as an electron transport layer (ETL). Uniform ZMO is applied as ETL of the inverted structured QLED and the adjustment of Ar/O<sub>2</sub> ratio on device characteristics is studied in detail. Compared to pristine ZMO, ZMOs with O<sub>2</sub> gas are found to be beneficial to the charge balance in the emitting layer of QLEDs mainly by their upshifted conduction band minimum, which in turn limits an electron injection. Additionally, it is found that oxygen vacancies in the ZMO, acting as the exciton quenching sites, are responsible for the device stability. QLEDs with 6:1 ZMO produce a maximum luminance of 136,257 cd/m<sup>2</sup> and external quantum efficiency of 5.15%, which are the best device performances to date among QLEDs with sputtered ETLs. These results indicate that the sputtered ZMO shows great promise for use as an inorganic ETL for future large-area QLEDs.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"140 - 149"},"PeriodicalIF":2.1000,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Large-Area Quantum Dot Light-Emitting Diodes Employing Sputtered Zn0.85Mg0.15O Electron Transport Material\",\"authors\":\"Bomi Kim, Jiwan Kim\",\"doi\":\"10.1007/s13391-023-00482-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We report a large-area quantum dot light-emitting diode (QLED) with sputtered Zn<sub>0.85</sub>Mg<sub>0.15</sub>O (ZMO) as an electron transport layer (ETL). Uniform ZMO is applied as ETL of the inverted structured QLED and the adjustment of Ar/O<sub>2</sub> ratio on device characteristics is studied in detail. Compared to pristine ZMO, ZMOs with O<sub>2</sub> gas are found to be beneficial to the charge balance in the emitting layer of QLEDs mainly by their upshifted conduction band minimum, which in turn limits an electron injection. Additionally, it is found that oxygen vacancies in the ZMO, acting as the exciton quenching sites, are responsible for the device stability. QLEDs with 6:1 ZMO produce a maximum luminance of 136,257 cd/m<sup>2</sup> and external quantum efficiency of 5.15%, which are the best device performances to date among QLEDs with sputtered ETLs. These results indicate that the sputtered ZMO shows great promise for use as an inorganic ETL for future large-area QLEDs.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 2\",\"pages\":\"140 - 149\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-01-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-023-00482-9\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00482-9","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Large-Area Quantum Dot Light-Emitting Diodes Employing Sputtered Zn0.85Mg0.15O Electron Transport Material
We report a large-area quantum dot light-emitting diode (QLED) with sputtered Zn0.85Mg0.15O (ZMO) as an electron transport layer (ETL). Uniform ZMO is applied as ETL of the inverted structured QLED and the adjustment of Ar/O2 ratio on device characteristics is studied in detail. Compared to pristine ZMO, ZMOs with O2 gas are found to be beneficial to the charge balance in the emitting layer of QLEDs mainly by their upshifted conduction band minimum, which in turn limits an electron injection. Additionally, it is found that oxygen vacancies in the ZMO, acting as the exciton quenching sites, are responsible for the device stability. QLEDs with 6:1 ZMO produce a maximum luminance of 136,257 cd/m2 and external quantum efficiency of 5.15%, which are the best device performances to date among QLEDs with sputtered ETLs. These results indicate that the sputtered ZMO shows great promise for use as an inorganic ETL for future large-area QLEDs.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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