基于端接耦合线结构的宽带滤波功率放大器

IF 1.4 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Microwave and Wireless Technologies Pub Date : 2024-02-13 DOI:10.1017/s1759078724000059
Guohua Liu, Jianyuan Yu, Yijun Lin
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引用次数: 0

摘要

本文提出了一种基于端接耦合线结构(TCLS)的宽带滤波功率放大器(PA)设计方法。该方法通过在 TCLS 的四个端口上加载阶梯阻抗谐振器和短路存根,产生四个传输零点和三个传输极点,从而大大优化了输出匹配网络的带内回损和阻带抑制。此外,对二次谐波的有效抑制也提高了功率放大器的效率。为了验证这种设计方法的有效性和优越性,我们设计并制造了一个 2.9-3.7 GHz 的宽带带通滤波功率放大器。测量结果表明,饱和输出功率为 40.1 dBm 至 41.2 dBm,漏极效率大于 60.3%,增益为 10-11.2 dB。
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Wideband filtering power amplifier based on terminated coupled line structure
This paper proposes a design method for designing a wideband filtering power amplifier (PA) based on terminated coupled line structure (TCLS). This method generates four transmission zeros and three transmission poles by loading stepped impedance resonator and short-circuit stubs on the four ports of TCLS, which greatly optimizes the in-band return loss and stopband suppression of the output matching network. In addition, the effective suppression of the second harmonic also increases the efficiency of the PA. In order to verify the effectiveness and superiority of this design method, a wideband bandpass filtering PA is designed and manufactured in 2.9–3.7 GHz. Measurement results show that the saturated output power is from 40.1 dBm to 41.2 dBm, the drain efficiency is greater than 60.3%, and the gain is 10–11.2 dB.
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来源期刊
International Journal of Microwave and Wireless Technologies
International Journal of Microwave and Wireless Technologies ENGINEERING, ELECTRICAL & ELECTRONIC-TELECOMMUNICATIONS
CiteScore
3.50
自引率
7.10%
发文量
130
审稿时长
6-12 weeks
期刊介绍: The prime objective of the International Journal of Microwave and Wireless Technologies is to enhance the communication between microwave engineers throughout the world. It is therefore interdisciplinary and application oriented, providing a platform for the microwave industry. Coverage includes: applied electromagnetic field theory (antennas, transmission lines and waveguides), components (passive structures and semiconductor device technologies), analogue and mixed-signal circuits, systems, optical-microwave interactions, electromagnetic compatibility, industrial applications, biological effects and medical applications.
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