L. A. Snigirev, V. I. Ushanov, A. A. Ivanov, N. A. Bert, D. A. Kirilenko, M. A. Yagovkina, V. V. Preobrazhenskii, M. A. Putyato, B. P. Semyagin, I. A. Kasatkin, V. V. Chaldyshev
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引用次数: 0
摘要
摘要 通过分子束外延技术，成功地在低温下生长出铝含量 x ~ 60% 和锑含量 y ~ 3% 的 AlxGa1-xAs1-y Sby 外延层。通过随后的退火，在半导体基体中形成了发达的 AsSb 纳米夹杂物体系。所获得的超材料具有扩展的透明窗口，这使我们能够记录 AlxGa1-xAs1-ySby 半导体基体带间吸收边缘附近的光吸收。观察到的消光带参数使我们能够将光吸收归因于 AsSb 纳米夹杂物系统中的等离子体共振。
Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial
Abstract
epitaxial layers of AlxGa1–xAs1–y Sby with an aluminum content x ~ 60% and antimony content y ~ 3% were successfully grown by molecular-beam epitaxy at low temperature. A developed system of AsSb nanoinclusions was formed in the semiconductor matrix by subsequent annealing. The extended transparency window of the obtained metamaterial allows us to document the absorption of light near the interband absorption edge of the AlxGa1–xAs1–ySby semiconductor matrix. Parameters of the observed extinction band allow us to attribute the optical absorption to the plasmon resonance in the system of AsSb nanoinclusions.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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