Hg0.7Cd0.3Te 外延薄膜的光学和结构特性

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-03-15 DOI:10.1134/s1063782623090026

D. A. Andryushchenko, M. S. Ruzhevich, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, V. G. Remesnik

{"title":"Hg0.7Cd0.3Te 外延薄膜的光学和结构特性","authors":"D. A. Andryushchenko, M. S. Ruzhevich, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, V. G. Remesnik","doi":"10.1134/s1063782623090026","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of comparative studies of the optical and structural properties of Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te bulk crystals and epitaxial films grown by various methods are presented. The data of photoluminescence studies performed in the temperature range 4.2–300 K showed the similarity of the optical properties of different samples and indicated a significant disordering of the solid solution. According to X-ray diffraction data, however, the scale of the disordering was not directly related to the structural quality of the material. The prospects for using the material grown by various methods in optoelectronics applications are discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"60 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films\",\"authors\":\"D. A. Andryushchenko, M. S. Ruzhevich, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, V. G. Remesnik\",\"doi\":\"10.1134/s1063782623090026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The results of comparative studies of the optical and structural properties of Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te bulk crystals and epitaxial films grown by various methods are presented. The data of photoluminescence studies performed in the temperature range 4.2–300 K showed the similarity of the optical properties of different samples and indicated a significant disordering of the solid solution. According to X-ray diffraction data, however, the scale of the disordering was not directly related to the structural quality of the material. The prospects for using the material grown by various methods in optoelectronics applications are discussed.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"60 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782623090026\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782623090026","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

摘要本文介绍了对 Hg0.7Cd0.3Te 块状晶体和通过不同方法生长的外延薄膜的光学和结构特性进行比较研究的结果。在 4.2-300 K 温度范围内进行的光致发光研究数据显示，不同样品的光学特性相似，并表明固溶体存在明显的无序性。不过，根据 X 射线衍射数据，无序的程度与材料的结构质量没有直接关系。本文讨论了在光电子学应用中使用通过各种方法生长的材料的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

摘要图片

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films

Abstract

The results of comparative studies of the optical and structural properties of Hg_0.7Cd_0.3Te bulk crystals and epitaxial films grown by various methods are presented. The data of photoluminescence studies performed in the temperature range 4.2–300 K showed the similarity of the optical properties of different samples and indicated a significant disordering of the solid solution. According to X-ray diffraction data, however, the scale of the disordering was not directly related to the structural quality of the material. The prospects for using the material grown by various methods in optoelectronics applications are discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.