基于 InGaAs/GaAs 量子阱点的带吸收介质的 pi-n 光电探测器研究

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-03-15 DOI:10.1134/s1063782623050093

N. V. Kryzhanovskaya, S. A. Blokhin, I. S. Makhov, E. I. Moiseev, A. M. Nadtochiy, N. A. Fominykh, S. A. Mintairov, N. A. Kaluyzhnyy, Yu. A. Guseva, M. M. Kulagina, F. I. Zubov, E. S. Kolodeznyi, M. V. Maximov, A. E. Zhukov

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引用次数: 0

摘要

摘要研究了基于 InGaAs/GaAs 量子阱点的波导光电探测器吸收区在室温下的静态和动态特性。InGaAs/GaAs 量子阱点的吸收带光谱范围为 900 至 1100 nm。波导光电探测器的宽度为 50 μm，吸收区的长度为 92 μm 至 400 μm。在寄生等效 RC 电路时间常数的限制下，暗电流密度较低（-1 和 -20 V 时分别为 1.1 和 22 μA/cm2），截止频率为 5.6 GHz。

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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots

Abstract

The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 μm and a length of the absorbing region from 92 μm to 400 μm. A low dark current density (1.1 and 22 μA/cm² at –1 and –20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC-circuit, were obtained.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.