基于晶体硅中嵌入式银纳米颗粒的 SERS 活性基板:建模、技术与应用

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-03-15 DOI:10.1134/s1063782623040061
A. A. Ermina, N. S. Solodovchenko, K. V. Prigoda, V. S. Levitskii, S. I. Pavlov, Yu. A. Zharova
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引用次数: 0

摘要

摘要 介绍了一种获得 SiO2:Ag:Si 和 Ag:Si 混合纳米结构的简单方法。通过对晶体硅表面的银岛薄膜进行高温退火,可以保留银纳米粒子的质子特性,并通过在其表面镀上一层热生长的二氧化硅保护它们不受外界影响。对晶体硅中嵌入银纳米粒子的结构中电场强度分布的计算表明,在纳米粒子的边角处存在固有的 "热点",这导致拉曼散射的最大增强因子(约 106)。对局部等离子体共振的光谱位置与结构几何形状的关系进行数值计算,可作为未来结构设计的基础。表面增强拉曼散射显示,可以从浓度为 10-5 M 的水溶液中可靠地检测出甲基橙。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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SERS-Active Substrates Based on Embedded Ag Nanoparticles in c-Si: Modeling, Technology, Application

Abstract

A simple method for obtaining SiO2:Ag:Si and Ag:Si hybrid nanostructures is presented. High-temperature annealing of an Ag island film on the surface of c-Si makes it possible to preserve the plasmonic properties of Ag nanoparticles and protect them from external influences by coating them with a thermally grown layer of SiO2. The calculation of the electric field strength distribution in the structure with embedded Ag nanoparticles in c-Si demonstrates the presence of intrinsic “hot spots” at the corners of the nanoparticles, which leads to a maximum enhancement factor (~106) of Raman scattering. A numerical calculation of the dependence of the spectral position of a localized plasmon resonance on the geometry of structures can serve as a basis for their design in the future. Surface-enhanced Raman scattering showed reliable detection of the methyl orange from an aqueous solution at a concentration of <10–5 M.

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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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