N. S. Potapovich, M. V. Nakhimovich, V. P. Khvostikov
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InGaAsP/InP Photovoltaic Converters for Narrowband Radiation
Abstract
Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial p–n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.
期刊介绍：
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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