Kazuki Ikeyama, Hidemoto Tomita, S. Harada, Takashi Okawa, Li Liu, T. Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato
{"title":"通过雾状 CVD 沉积栅极氧化物的 GaN MOSFET 中增强的场效应迁移率(> 250 cm2/V-s","authors":"Kazuki Ikeyama, Hidemoto Tomita, S. Harada, Takashi Okawa, Li Liu, T. Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato","doi":"10.35848/1882-0786/ad4d3d","DOIUrl":null,"url":null,"abstract":"\n We report an enhanced field-effect mobility (> 250 cm2·V-1·s-1) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface that was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm2·V-1·s-1 with a high threshold voltage of 4.8 V.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced field-effect mobility (> 250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD\",\"authors\":\"Kazuki Ikeyama, Hidemoto Tomita, S. Harada, Takashi Okawa, Li Liu, T. Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato\",\"doi\":\"10.35848/1882-0786/ad4d3d\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n We report an enhanced field-effect mobility (> 250 cm2·V-1·s-1) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface that was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm2·V-1·s-1 with a high threshold voltage of 4.8 V.\",\"PeriodicalId\":8093,\"journal\":{\"name\":\"Applied Physics Express\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Express\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/ad4d3d\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad4d3d","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
摘要
我们报告了 GaN MOSFET 中增强的场效应迁移率(> 250 cm2-V-1-s-1)。氮化镓表面氧化是影响氮化镓 MOSFET 沟道迁移率的主要因素,而高迁移率是通过减少氮化镓表面氧化实现的。在各种栅极氧化物沉积方法中,使用 O3 的雾 CVD 能抑制 GaN 表面氧化。雾状 CVD 沉积栅极氧化物的场效应迁移率最高,峰值迁移率达到 266 cm2-V-1-s-1,阈值电压高达 4.8 V。
Enhanced field-effect mobility (> 250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD
We report an enhanced field-effect mobility (> 250 cm2·V-1·s-1) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface that was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm2·V-1·s-1 with a high threshold voltage of 4.8 V.
期刊介绍:
Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).