通过雾状 CVD 沉积栅极氧化物的 GaN MOSFET 中增强的场效应迁移率（> 250 cm2/V-s

IF 4.7 Q2 MATERIALS SCIENCE, BIOMATERIALS ACS Applied Bio Materials Pub Date : 2024-05-17 DOI:10.35848/1882-0786/ad4d3d

Kazuki Ikeyama, Hidemoto Tomita, S. Harada, Takashi Okawa, Li Liu, T. Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato

{"title":"通过雾状 CVD 沉积栅极氧化物的 GaN MOSFET 中增强的场效应迁移率（> 250 cm2/V-s","authors":"Kazuki Ikeyama, Hidemoto Tomita, S. Harada, Takashi Okawa, Li Liu, T. Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato","doi":"10.35848/1882-0786/ad4d3d","DOIUrl":null,"url":null,"abstract":"\n We report an enhanced field-effect mobility (> 250 cm2·V-1·s-1) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface that was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm2·V-1·s-1 with a high threshold voltage of 4.8 V.","PeriodicalId":2,"journal":{"name":"ACS Applied Bio Materials","volume":"11 10","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced field-effect mobility (> 250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD\",\"authors\":\"Kazuki Ikeyama, Hidemoto Tomita, S. Harada, Takashi Okawa, Li Liu, T. Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato\",\"doi\":\"10.35848/1882-0786/ad4d3d\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n We report an enhanced field-effect mobility (> 250 cm2·V-1·s-1) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface that was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm2·V-1·s-1 with a high threshold voltage of 4.8 V.\",\"PeriodicalId\":2,\"journal\":{\"name\":\"ACS Applied Bio Materials\",\"volume\":\"11 10\",\"pages\":\"\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2024-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Bio Materials\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/ad4d3d\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, BIOMATERIALS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Bio Materials","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad4d3d","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, BIOMATERIALS","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了 GaN MOSFET 中增强的场效应迁移率（> 250 cm2-V-1-s-1）。氮化镓表面氧化是影响氮化镓 MOSFET 沟道迁移率的主要因素，而高迁移率是通过减少氮化镓表面氧化实现的。在各种栅极氧化物沉积方法中，使用 O3 的雾 CVD 能抑制 GaN 表面氧化。雾状 CVD 沉积栅极氧化物的场效应迁移率最高，峰值迁移率达到 266 cm2-V-1-s-1，阈值电压高达 4.8 V。

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Enhanced field-effect mobility (> 250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD

We report an enhanced field-effect mobility (> 250 cm2·V-1·s-1) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface that was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm2·V-1·s-1 with a high threshold voltage of 4.8 V.

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来源期刊

ACS Applied Bio Materials Chemistry-Chemistry (all)

CiteScore

9.40

自引率

2.10%

发文量

464

期刊介绍： ACS Applied Bio Materials is an interdisciplinary journal publishing original research covering all aspects of biomaterials and biointerfaces including and beyond the traditional biosensing, biomedical and therapeutic applications. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrates knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important bio applications. The journal is specifically interested in work that addresses the relationship between structure and function and assesses the stability and degradation of materials under relevant environmental and biological conditions.