{"title":"以 MnBi2Te4 外延薄膜为平台实现量子反常霍尔效应的最新进展","authors":"Qile Li, Sung-Kwan Mo, Mark T. Edmonds","doi":"10.1039/d4nr00194j","DOIUrl":null,"url":null,"abstract":"Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> has the potential to eliminate or significantly reduce magnetic disorder, and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> thin films at zero magnetic field, and what leads to the difficulty in quantisation remains a mystery. Although bulk MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> and exfoliated flakes have been well studied, revealing both the QAH effect and axion insulator phases, experimental progress on MBE thin films has been slower. Understanding how the breakdown of QAHE occurs in MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> thin films and finding solutions that will enable mass-producing millimetre-size QAHE devices operating at elevated temperatures is required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> thin films and discuss mechanisms that could explain the failure of QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising QAHE at elevated temperatures in MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> thin films.","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":null,"pages":null},"PeriodicalIF":5.8000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recent progress on MnBi2Te4 epitaxial thin films as a platform for realising quantum anomalous Hall effect\",\"authors\":\"Qile Li, Sung-Kwan Mo, Mark T. Edmonds\",\"doi\":\"10.1039/d4nr00194j\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> has the potential to eliminate or significantly reduce magnetic disorder, and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> thin films at zero magnetic field, and what leads to the difficulty in quantisation remains a mystery. Although bulk MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> and exfoliated flakes have been well studied, revealing both the QAH effect and axion insulator phases, experimental progress on MBE thin films has been slower. Understanding how the breakdown of QAHE occurs in MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> thin films and finding solutions that will enable mass-producing millimetre-size QAHE devices operating at elevated temperatures is required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> thin films and discuss mechanisms that could explain the failure of QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising QAHE at elevated temperatures in MnBi<small><sub>2</sub></small>Te<small><sub>4</sub></small> thin films.\",\"PeriodicalId\":92,\"journal\":{\"name\":\"Nanoscale\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.8000,\"publicationDate\":\"2024-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanoscale\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1039/d4nr00194j\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d4nr00194j","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Recent progress on MnBi2Te4 epitaxial thin films as a platform for realising quantum anomalous Hall effect
Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi2Te4 has the potential to eliminate or significantly reduce magnetic disorder, and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films at zero magnetic field, and what leads to the difficulty in quantisation remains a mystery. Although bulk MnBi2Te4 and exfoliated flakes have been well studied, revealing both the QAH effect and axion insulator phases, experimental progress on MBE thin films has been slower. Understanding how the breakdown of QAHE occurs in MnBi2Te4 thin films and finding solutions that will enable mass-producing millimetre-size QAHE devices operating at elevated temperatures is required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi2Te4 thin films and discuss mechanisms that could explain the failure of QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising QAHE at elevated temperatures in MnBi2Te4 thin films.
期刊介绍:
Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.