设计基于矩形双传输线结构的宽带高效功率放大器

IF 1.4 4区计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Microwave and Wireless Technologies Pub Date : 2024-07-02 DOI:10.1017/s1759078724000606

Luyu Zhang, Zhiwei Zhang, Chenlu Wang, Chao Gu

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引用次数: 0

摘要

本文介绍了一种宽带高效功率放大器（PA）的设计方法。该方法利用了扩展连续 Class-GF 模式的巨大可用阻抗空间。为满足阻抗要求，提出了一种由矩形双传输线结构组成的新型功率放大器输出匹配网络。为了验证这种结构的有效性，我们使用 CGH40010F GaN 晶体管设计了工作频率为 0.8-3.0 GHz 的高效功率放大器。测量结果表明，在 0.8-3 GHz 频段内，漏极效率在 63.2%-71.9% 之间，输出功率在 40.2-42.2 dBm 之间，增益在 9.4-11.3 dB 之间。实现的功率放大器具有极具竞争力的 115.8% 相对带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a broadband high-efficiency power amplifier based on a rectangular double transmission line structure

This paper presents a design methodology for a broadband high-efficiency power amplifier (PA). The large available impedance space of the extended continuous Class-GF mode is employed. A novel output matching network of the PA consisting of a rectangular double transmission line structure is proposed to meet impedance requirements. To validate the effectiveness of this structure, a high-efficiency PA operating in 0.8–3.0 GHz is designed using a CGH40010F GaN transistor. The measured results demonstrate that the drain efficiency falls within the range of 63.2%–71.9%, the output power varies from 40.2 to 42.2 dBm, and the gain ranges from 9.4 to 11.3 dB within the frequency band of 0.8–3 GHz. The realized PA exhibits an extremely competitive relative bandwidth of 115.8%.

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来源期刊

International Journal of Microwave and Wireless Technologies ENGINEERING, ELECTRICAL & ELECTRONIC-TELECOMMUNICATIONS

CiteScore

3.50

自引率

7.10%

发文量

130

审稿时长

6-12 weeks

期刊介绍： The prime objective of the International Journal of Microwave and Wireless Technologies is to enhance the communication between microwave engineers throughout the world. It is therefore interdisciplinary and application oriented, providing a platform for the microwave industry. Coverage includes: applied electromagnetic field theory (antennas, transmission lines and waveguides), components (passive structures and semiconductor device technologies), analogue and mixed-signal circuits, systems, optical-microwave interactions, electromagnetic compatibility, industrial applications, biological effects and medical applications.