{"title":"锡取向对铜锡焊料电迁移失效的影响","authors":"Andrew Minh Pham, Fariha Haq, Subramanya Sadasiva, Guangxu Li, Marisol Koslowski","doi":"10.1007/s11664-024-11301-8","DOIUrl":null,"url":null,"abstract":"<p>Sn-Ag-Cu (SAC) has emerged as one of the most widely accepted lead-free solders used as interconnecting material in electronic packaging. However, these systems still have major reliability problems. During manufacturing, the interfacial reaction of Cu with molten Sn-based solder results in the formation of brittle intermetallic compounds (IMC) that accelerate the degradation of these systems. The evolution of IMC follows during operation due to electromigration (EM), which in addition is responsible for Cu depletion. Both mechanisms are strongly affected by the anisotropic diffusion of Sn resulting in large variability of solders life time prediction. We developed a model to study the formation and evolution of IMC and the diffusion of copper due to EM that includes the impact of Sn crystal orientation on solder failure during fabrication and operation. Our findings show that IMC growth is polarized during electromigration, accelerating at the anode and slowing at the cathode. Similarly, copper depletion is more pronounced at the cathode. The anisotropy of Sn strongly affects the rates of IMC growth and copper depletion during electromigration, shaping solder failure during operation.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Sn Orientation on Electromigration Failure in CuSn Solders\",\"authors\":\"Andrew Minh Pham, Fariha Haq, Subramanya Sadasiva, Guangxu Li, Marisol Koslowski\",\"doi\":\"10.1007/s11664-024-11301-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Sn-Ag-Cu (SAC) has emerged as one of the most widely accepted lead-free solders used as interconnecting material in electronic packaging. However, these systems still have major reliability problems. During manufacturing, the interfacial reaction of Cu with molten Sn-based solder results in the formation of brittle intermetallic compounds (IMC) that accelerate the degradation of these systems. The evolution of IMC follows during operation due to electromigration (EM), which in addition is responsible for Cu depletion. Both mechanisms are strongly affected by the anisotropic diffusion of Sn resulting in large variability of solders life time prediction. We developed a model to study the formation and evolution of IMC and the diffusion of copper due to EM that includes the impact of Sn crystal orientation on solder failure during fabrication and operation. Our findings show that IMC growth is polarized during electromigration, accelerating at the anode and slowing at the cathode. Similarly, copper depletion is more pronounced at the cathode. The anisotropy of Sn strongly affects the rates of IMC growth and copper depletion during electromigration, shaping solder failure during operation.</p>\",\"PeriodicalId\":626,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-07-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s11664-024-11301-8\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11301-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
锡银铜(SAC)已成为电子封装中用作互连材料的最广为接受的无铅焊料之一。然而,这些系统仍然存在严重的可靠性问题。在生产过程中,铜与熔融锡基焊料的界面反应会形成脆性金属间化合物(IMC),从而加速这些系统的降解。在运行过程中,由于电迁移(EM)作用,IMC 也会随之发生变化,这也是造成铜耗竭的原因。这两种机制都受到锡的各向异性扩散的强烈影响,从而导致焊料寿命预测的巨大差异。我们开发了一个模型来研究 IMC 的形成和演变以及 EM 导致的铜扩散,其中包括锡晶体取向对制造和操作过程中焊料失效的影响。我们的研究结果表明,在电迁移过程中,IMC 的生长是两极分化的,阳极的生长速度加快,而阴极的生长速度减慢。同样,阴极的铜耗竭更为明显。在电迁移过程中,锡的各向异性对 IMC 生长和铜耗尽的速率有很大影响,从而形成了操作过程中的焊接故障。
Effect of Sn Orientation on Electromigration Failure in CuSn Solders
Sn-Ag-Cu (SAC) has emerged as one of the most widely accepted lead-free solders used as interconnecting material in electronic packaging. However, these systems still have major reliability problems. During manufacturing, the interfacial reaction of Cu with molten Sn-based solder results in the formation of brittle intermetallic compounds (IMC) that accelerate the degradation of these systems. The evolution of IMC follows during operation due to electromigration (EM), which in addition is responsible for Cu depletion. Both mechanisms are strongly affected by the anisotropic diffusion of Sn resulting in large variability of solders life time prediction. We developed a model to study the formation and evolution of IMC and the diffusion of copper due to EM that includes the impact of Sn crystal orientation on solder failure during fabrication and operation. Our findings show that IMC growth is polarized during electromigration, accelerating at the anode and slowing at the cathode. Similarly, copper depletion is more pronounced at the cathode. The anisotropy of Sn strongly affects the rates of IMC growth and copper depletion during electromigration, shaping solder failure during operation.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.