直接在硅上生长的 III-V 半导体量子点激光器的研究进展:综述

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-07-24 DOI:10.1007/s12633-024-03098-2
Rehab Joko Hussin, Ivan B. Karomi
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引用次数: 0

摘要

使用硅作为 III-V 族光子集成电路量子点(QD)激光器的衬底可带来巨大优势,如低成本、高带宽传输数据、片上光源等。然而,在硅衬底上直接生长 III-V 族量子点激光器时会遇到一些困难,主要是由于 III-V 族元件与硅晶片之间的高度晶格不匹配。事实上,高热膨胀系数差、穿线位错密度(TDD)和反相界(APB)是在硅上开发高性能半导体激光器的关键障碍。在这方面,已有许多方法和策略致力于在硅上容限生长 III-V 族化合物。本综述介绍了在硅基底上直接生长 QD 激光二极管的历史。讨论了在硅上外延生长 III-V 半导体材料的优势和问题。回顾了在硅上生长的 QD 激光器的最新进展,重点介绍了 InAs-QD 激光器在阈值电流密度、输出光功率、发射波长和工作温度方面的情况。本综述还讨论了在硅基底上单片生长的 QD 激光器的未来及其应用。
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Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Enormous advantages can be brought by using silicon as a substrate for III-V photonic integrated circuit quantum dot (QD) lasers, such as a low cost, high bandwidth transmission data, on-chip light sources, etc. However, several difficulties arise when III-V QD lasers are grown directly on Si-substrate, mainly due to high lattice mismatching between the III-V components and the silicon wafer. In fact, a highly thermal expansion coefficient difference, threading dislocation densities (TDDs), and antiphase boundaries (APBs) are the crucial obstacles for developing a high-performance semiconductor laser on Si. In this regard, many approaches and strategies have been devoted to tolerantly grow III-V on Si. In this review, the history of QD laser diodes directly grown on Si-substrate is demonstrated. The benefits and the problems of III-V semiconductor materials epitaxially grown on Si are discussed. The recent progress in QD lasers grown in silicon is reviewed, focusing on InAs-QD lasers in terms of threshold current density, output optical power, emission wavelengths, and operation temperatures. The future of QD lasers monolithically grown on Si-substrate and their application are also discussed in this review.

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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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