用于可调泊松光斑阵列的 PPLN 晶体的热光调制

IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-07-29 DOI:10.1109/JSTQE.2024.3434659
Nicolo Incardona;Jaromir Behal;Veronica Vespini;Sara Coppola;Vittorio Bianco;Lisa Miccio;Simonetta Grilli;Manuel Martinez-Corral;Pietro Ferraro
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引用次数: 0

摘要

铌酸锂是一种具有有趣物理特性的铁电材料。其中,周期极化铌酸锂晶体(PPLN)已被广泛应用于非线性光学或微型透镜阵列制造等领域。在这项工作中,我们使用了一种具有六角形反向极化畴的 PPLN 晶体,并将其布置在周期为 200 微米的正方形阵列上。我们在 PPLN 上施加温度梯度,同时使用无透镜非相干全息显微镜对其进行观察。我们观察到,反偏振域的相位随温度的变化而变化。因此,我们对 PPLN 晶体进行了热光学调制。我们进一步分析了 PPLN 的行为,将复合场传播到晶体之外并绘制其强度图。我们发现,由于衍射作用,每个六边形反向极化域的中心都形成了一个拉长的亮点。鉴于其形状和现象的性质,这些亮斑类似于泊松斑。光斑的强度取决于 PPLN 的相位(因此也取决于应用的温度)。因此,我们能够通过控制 PPLN 的温度来生成可调泊松光斑阵列。
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Thermo-Optical Modulation of PPLN Crystal for Tunable Poisson Spot Array
Lithium Niobate is a ferroelectric material with interesting physical properties. In particular, Periodically Poled Lithium Niobate (PPLN) crystals have been used in diverse applications, such as non-linear optics or microlens array fabrication. In this work, we used a PPLN crystal having hexagonal reversed polarization domains, disposed on a square array of 200 µm period. We applied a temperature gradient to the PPLN and simultaneously observed it with a lensless incoherent holographic microscope. We observed that the phase of the inverse polarization domains varied depending on the temperature applied. Therefore, we induced a thermo-optical modulation of the PPLN crystal. We further analysed the behaviour of the PPLN, propagating the complex field beyond the crystal and plotting its intensity. We found that an elongated bright spot was formed at the centre of each hexagonal reversed polarization domain, due to diffraction. Given their shape and the nature of the phenomenon, these intensity spots are similar to Poisson spots. The intensity of the spots depended on the phase of the PPLN (hence, on the temperature applied). Therefore, we were able to generate a tunable Poisson spot array by controlling the temperature of the PPLN.
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来源期刊
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
10.60
自引率
2.00%
发文量
212
审稿时长
3 months
期刊介绍: Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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