Exploring Influential Factors Affecting Baseplate Distortion and Residual Stress in Insulated-Gate Bipolar Transistor (IGBT) Modules During Reflow Soldering

The welding of a direct-bonded copper (DBC) substrate to the baseplate in insulated-gate bipolar transistor (IGBT) modules often induces distortion and residual stress within the baseplate, consequently impacting the operational reliability of the IGBT module. Therefore, a comprehensive analysis of the factors influencing baseplate distortion and residual stress during the reflow soldering process is imperative. This study employs a finite element simulation model to investigate the effects of varying thicknesses of IGBT module components, reflow temperature curve settings, and types of material on baseplate distortion and residual stress. The simulation results highlight that the material of the IGBT module components exerts the most substantial influence on baseplate distortion and residual stress, followed by component thickness, whereas the impact of the reflow temperature curve setting is comparatively minor. The analysis of these influencing factors offers valuable insights for optimizing component thickness selection, material choices for IGBT modules, and reflow temperature curve settings. Moreover, it serves as a practical guide for enhancing production processes and minimizing associated costs.

Graphical Abstract