Ge quantum well channel P-MOSFET for 2.45 GHz wireless weak energy harvesting

Wireless energy harvesting is an important application of microwave wireless energy transmission system, but due to the weak energy of RF signals in the 2.45 GHz band, its rectification efficiency is not ideal. As one of the core rectifier components of wireless weak energy harvesting system, the performance of MOSFET determines the rectification efficiency of the system, and its optimized design to improve the rectification efficiency is an important direction of current research in the field. In view of this, this paper proposes and designs Ge quantum well channel PMOS for wireless weak energy harvesting at 2.45 GHz, aiming to improve the rectification efficiency of wireless weak energy harvesting systems. Starting from adjusting the structural physical parameters of the MOS tubes, the absolute value of the threshold voltage is reduced in the weak energy density region, which in turn improves the rectification efficiency of the device. Then, the novel diode connection with the introduction of substrate bias effect is compared with the conventional connection using an ADS simulation circuit, and the simulation results show that the leakage current is smaller and the rectification efficiency is higher under the novel connection. On this basis, a Ge quantum well channel PMOS device is proposed. Compared with the Ge surface channel, the hole mobility of the quantum well channel will be greatly improved, and its rectification efficiency can also be improved. The device is connected to the rectifier circuit with a novel connection and simulated using Silvaco's Mixedmode module. The results show that the rectification efficiencies of the Ge quantum well channel MOS reach 13.53 % and 32 % at low input powers of −20.34 dBm and −6.28 dBm, respectively, which are 3.3 and 1.14 times higher than those of the conventional surface channel MOS.