基于 GaSb 的光子晶体表面发射 I 型量子阱二极管激光器。

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-08-05 DOI:10.1109/JSTQE.2024.3438710

Leon Shterengas;Gela Kipshidze;Aaron Stein;Won Jae Lee;Ruyan Liu;Gregory Belenky

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引用次数: 0

摘要

我们设计并制造了基于砷化镓的外延再生单片二极管 PCSEL，该器件可在室温下工作在 2 μm 附近的连续波段，并能从直径为 200 μm 的孔径产生 30 mW 的输出功率。器件的连续波阈值电流密度约为 500 A/cm2。由于在光子晶体层中增加了埋入空隙面积填充因子，每个单位晶胞内有多个空隙，从而提高了激光输出功率。PCSEL 在接近阈值电流时产生超低发散的甜甜圈形状光束。在较高的注入电流下，器件亮度受到高阶横向模式激发的限制。观察到埋入式光子晶体的不同带边状态产生了不同类型的矢量涡旋光束。

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Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers

The GaSb-based epitaxially regrown monolithic diode PCSELs operating near 2 μm at room temperature in continuous wave regime and generating 30 mW of output power from 200 μm diameter aperture have been designed and fabricated. The devices demonstrated CW threshold current density of about 500 A/cm ² . The laser output power was enhanced thanks to increased buried void area fill-factor in the photonic crystal layer with multiple voids per unit cell. The PCSEL generated ultra-low divergence donut shape beams at the currents near threshold. At higher injection currents, the device brightness was limited by excitation of the higher order lateral modes. Generation of the vector-vortex beams of different types by different band edge states of the buried photonic crystal was observed.

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.