{"title":"研究 GdFeO3/Fe97Si3 双层薄膜的磁性和电性","authors":"Rekha Gupta, Ravindra Kumar Kotnala, Anurag Tyagi","doi":"10.1007/s11664-024-11399-w","DOIUrl":null,"url":null,"abstract":"<p>Bilayer thin films of GdFeO<sub>3</sub>/Fe<sub>97</sub>Si<sub>3</sub> have been synthesized by RF–magnetron sputtering at different thicknesses of GdFeO<sub>3</sub>. A pure phase polycrystalline growth of GdFeO<sub>3</sub> and Fe<sub>97</sub>Si<sub>3</sub> has been confirmed by XRD measurements. Stress-induced room-temperature magnetocrystalline anisotropy has been confirmed in all the bilayer thin films. A high magnetic moment has been induced in antiferromagnetic GdFeO<sub>3</sub> thin films resulting in the ferromagnetic character of all the samples. The ferromagnetic moment was found to be enhanced with increasing thickness of the GdFeO<sub>3</sub> layer. The maximum value of the room- temperature magnetic moment has been observed as M<sub>s</sub> ~ 9.3 emu/ml in 170-nm-thick GdFeO<sub>3</sub> film. Dielectric measurements confirmed the induced magnetocapacitance due to grain boundary accumulation of charge carriers. Magnetic field control of capacitance and current–voltage measurements of these thin films represents a strong potential for the existence of magnetoelectric coupling in GdFeO<sub>3</sub>/Fe<sub>97</sub>Si<sub>3</sub> films. A maximum 30% rise in magnetocapacitance and a 95.6% increase in tunneling current in an applied 1-kOe magnetic field was obtained for 170-nm-thick GFO thin film. These thin films possess applications in spintronic devices due to the presence of room- temperature magnetocrystalline anisotropy and magnetic control of the electric properties.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Magnetic and Electrical Properties of GdFeO3/Fe97Si3 Bilayer Thin Films\",\"authors\":\"Rekha Gupta, Ravindra Kumar Kotnala, Anurag Tyagi\",\"doi\":\"10.1007/s11664-024-11399-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Bilayer thin films of GdFeO<sub>3</sub>/Fe<sub>97</sub>Si<sub>3</sub> have been synthesized by RF–magnetron sputtering at different thicknesses of GdFeO<sub>3</sub>. A pure phase polycrystalline growth of GdFeO<sub>3</sub> and Fe<sub>97</sub>Si<sub>3</sub> has been confirmed by XRD measurements. Stress-induced room-temperature magnetocrystalline anisotropy has been confirmed in all the bilayer thin films. A high magnetic moment has been induced in antiferromagnetic GdFeO<sub>3</sub> thin films resulting in the ferromagnetic character of all the samples. The ferromagnetic moment was found to be enhanced with increasing thickness of the GdFeO<sub>3</sub> layer. The maximum value of the room- temperature magnetic moment has been observed as M<sub>s</sub> ~ 9.3 emu/ml in 170-nm-thick GdFeO<sub>3</sub> film. Dielectric measurements confirmed the induced magnetocapacitance due to grain boundary accumulation of charge carriers. Magnetic field control of capacitance and current–voltage measurements of these thin films represents a strong potential for the existence of magnetoelectric coupling in GdFeO<sub>3</sub>/Fe<sub>97</sub>Si<sub>3</sub> films. A maximum 30% rise in magnetocapacitance and a 95.6% increase in tunneling current in an applied 1-kOe magnetic field was obtained for 170-nm-thick GFO thin film. These thin films possess applications in spintronic devices due to the presence of room- temperature magnetocrystalline anisotropy and magnetic control of the electric properties.</p>\",\"PeriodicalId\":626,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":\"12 1\",\"pages\":\"\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s11664-024-11399-w\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11399-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of Magnetic and Electrical Properties of GdFeO3/Fe97Si3 Bilayer Thin Films
Bilayer thin films of GdFeO3/Fe97Si3 have been synthesized by RF–magnetron sputtering at different thicknesses of GdFeO3. A pure phase polycrystalline growth of GdFeO3 and Fe97Si3 has been confirmed by XRD measurements. Stress-induced room-temperature magnetocrystalline anisotropy has been confirmed in all the bilayer thin films. A high magnetic moment has been induced in antiferromagnetic GdFeO3 thin films resulting in the ferromagnetic character of all the samples. The ferromagnetic moment was found to be enhanced with increasing thickness of the GdFeO3 layer. The maximum value of the room- temperature magnetic moment has been observed as Ms ~ 9.3 emu/ml in 170-nm-thick GdFeO3 film. Dielectric measurements confirmed the induced magnetocapacitance due to grain boundary accumulation of charge carriers. Magnetic field control of capacitance and current–voltage measurements of these thin films represents a strong potential for the existence of magnetoelectric coupling in GdFeO3/Fe97Si3 films. A maximum 30% rise in magnetocapacitance and a 95.6% increase in tunneling current in an applied 1-kOe magnetic field was obtained for 170-nm-thick GFO thin film. These thin films possess applications in spintronic devices due to the presence of room- temperature magnetocrystalline anisotropy and magnetic control of the electric properties.
期刊介绍：
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.
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