{"title":"不同基底对 BiFe0.91Zr0.09O3 薄膜结构和性质的影响","authors":"Zhen Jiang, Zhibiao Ma, Yuan Liu, Jingxian He, Shuhui Sun, Zhenfeng Jing, Fengqing Zhang","doi":"10.1007/s11664-024-11376-3","DOIUrl":null,"url":null,"abstract":"<p>BiFe<sub>0.91</sub>Zr<sub>0.09</sub>O<sub>3</sub> (9BFZrO)/LaNiO<sub>3</sub> (LNO)/MgO and 9BFZrO/LNO/Si multilayers were prepared by the sol–gel method using MgO and Si single crystals as substrates, and LNO films with a thickness of approximately 50 nm were deposited by magnetron sputtering to form bottom electrodes and transition layers. The effects of different substrates on the crystal structure, phase composition, oxygen vacancy content, ferroelectric properties, dielectric properties, leakage mechanism, and ageing properties of the 9BFZrO films were systematically analysed. X-ray diffraction showed that the prepared 9BFZrO thin films had a structure composed of both rhombic <i>R</i>3<i>c</i> and orthogonal <i>Pnma</i> phases, and the films prepared on the MgO substrate contained a significant amount of the <i>R</i>3<i>c</i> phase. SEM analysis showed that the thin film prepared on the MgO substrate had a relatively large grain size. X-ray photoelectron spectroscopy showed that the Fe<sup>2+</sup> content and oxygen vacancy defect concentration of the MgO substrate samples were relatively low. The thin film prepared on the MgO substrate has a high residual polarization strength (2<i>P</i><sub><i>r</i></sub> = 60.28 μC/cm<sup>2</sup>) and a low leakage current density (4.71 × 10<sup>−6</sup> A/cm<sup>2</sup>). After 90 days of room-temperature ageing, the residual polarization strength (2<i>P</i><sub><i>r</i></sub>) of the film on the MgO substrate decreased by 16.8%, with a lower ageing degree and better stability.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Various Substrates on the Structure and Properties of BiFe0.91Zr0.09O3 Thin Films\",\"authors\":\"Zhen Jiang, Zhibiao Ma, Yuan Liu, Jingxian He, Shuhui Sun, Zhenfeng Jing, Fengqing Zhang\",\"doi\":\"10.1007/s11664-024-11376-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>BiFe<sub>0.91</sub>Zr<sub>0.09</sub>O<sub>3</sub> (9BFZrO)/LaNiO<sub>3</sub> (LNO)/MgO and 9BFZrO/LNO/Si multilayers were prepared by the sol–gel method using MgO and Si single crystals as substrates, and LNO films with a thickness of approximately 50 nm were deposited by magnetron sputtering to form bottom electrodes and transition layers. The effects of different substrates on the crystal structure, phase composition, oxygen vacancy content, ferroelectric properties, dielectric properties, leakage mechanism, and ageing properties of the 9BFZrO films were systematically analysed. X-ray diffraction showed that the prepared 9BFZrO thin films had a structure composed of both rhombic <i>R</i>3<i>c</i> and orthogonal <i>Pnma</i> phases, and the films prepared on the MgO substrate contained a significant amount of the <i>R</i>3<i>c</i> phase. SEM analysis showed that the thin film prepared on the MgO substrate had a relatively large grain size. X-ray photoelectron spectroscopy showed that the Fe<sup>2+</sup> content and oxygen vacancy defect concentration of the MgO substrate samples were relatively low. The thin film prepared on the MgO substrate has a high residual polarization strength (2<i>P</i><sub><i>r</i></sub> = 60.28 μC/cm<sup>2</sup>) and a low leakage current density (4.71 × 10<sup>−6</sup> A/cm<sup>2</sup>). After 90 days of room-temperature ageing, the residual polarization strength (2<i>P</i><sub><i>r</i></sub>) of the film on the MgO substrate decreased by 16.8%, with a lower ageing degree and better stability.</p>\",\"PeriodicalId\":626,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s11664-024-11376-3\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11376-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effects of Various Substrates on the Structure and Properties of BiFe0.91Zr0.09O3 Thin Films
BiFe0.91Zr0.09O3 (9BFZrO)/LaNiO3 (LNO)/MgO and 9BFZrO/LNO/Si multilayers were prepared by the sol–gel method using MgO and Si single crystals as substrates, and LNO films with a thickness of approximately 50 nm were deposited by magnetron sputtering to form bottom electrodes and transition layers. The effects of different substrates on the crystal structure, phase composition, oxygen vacancy content, ferroelectric properties, dielectric properties, leakage mechanism, and ageing properties of the 9BFZrO films were systematically analysed. X-ray diffraction showed that the prepared 9BFZrO thin films had a structure composed of both rhombic R3c and orthogonal Pnma phases, and the films prepared on the MgO substrate contained a significant amount of the R3c phase. SEM analysis showed that the thin film prepared on the MgO substrate had a relatively large grain size. X-ray photoelectron spectroscopy showed that the Fe2+ content and oxygen vacancy defect concentration of the MgO substrate samples were relatively low. The thin film prepared on the MgO substrate has a high residual polarization strength (2Pr = 60.28 μC/cm2) and a low leakage current density (4.71 × 10−6 A/cm2). After 90 days of room-temperature ageing, the residual polarization strength (2Pr) of the film on the MgO substrate decreased by 16.8%, with a lower ageing degree and better stability.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.