不同基底对 BiFe0.91Zr0.09O3 薄膜结构和性质的影响

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-08-22 DOI:10.1007/s11664-024-11376-3
Zhen Jiang, Zhibiao Ma, Yuan Liu, Jingxian He, Shuhui Sun, Zhenfeng Jing, Fengqing Zhang
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引用次数: 0

摘要

以氧化镁和硅单晶为基底,采用溶胶-凝胶法制备了 BiFe0.91Zr0.09O3 (9BFZrO)/LaNiO3 (LNO)/MgO 和 9BFZrO/LNO/Si 多层膜,并通过磁控溅射沉积了厚度约为 50 nm 的 LNO 薄膜以形成底电极和过渡层。系统分析了不同衬底对 9BFZrO 薄膜的晶体结构、相组成、氧空位含量、铁电性能、介电性能、漏电机制和老化性能的影响。X 射线衍射显示制备的 9BFZrO 薄膜具有由菱形 R3c 相和正交 Pnma 相组成的结构,在氧化镁基底上制备的薄膜含有大量 R3c 相。SEM 分析表明,在氧化镁基底上制备的薄膜具有相对较大的晶粒尺寸。X 射线光电子能谱显示,氧化镁基底样品的 Fe2+ 含量和氧空位缺陷浓度相对较低。在氧化镁基底上制备的薄膜具有较高的残余极化强度(2Pr = 60.28 μC/cm2)和较低的漏电流密度(4.71 × 10-6 A/cm2 )。经过 90 天的室温老化后,氧化镁基底上薄膜的残余极化强度(2Pr)降低了 16.8%,老化程度更低,稳定性更好。
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Effects of Various Substrates on the Structure and Properties of BiFe0.91Zr0.09O3 Thin Films

BiFe0.91Zr0.09O3 (9BFZrO)/LaNiO3 (LNO)/MgO and 9BFZrO/LNO/Si multilayers were prepared by the sol–gel method using MgO and Si single crystals as substrates, and LNO films with a thickness of approximately 50 nm were deposited by magnetron sputtering to form bottom electrodes and transition layers. The effects of different substrates on the crystal structure, phase composition, oxygen vacancy content, ferroelectric properties, dielectric properties, leakage mechanism, and ageing properties of the 9BFZrO films were systematically analysed. X-ray diffraction showed that the prepared 9BFZrO thin films had a structure composed of both rhombic R3c and orthogonal Pnma phases, and the films prepared on the MgO substrate contained a significant amount of the R3c phase. SEM analysis showed that the thin film prepared on the MgO substrate had a relatively large grain size. X-ray photoelectron spectroscopy showed that the Fe2+ content and oxygen vacancy defect concentration of the MgO substrate samples were relatively low. The thin film prepared on the MgO substrate has a high residual polarization strength (2Pr = 60.28 μC/cm2) and a low leakage current density (4.71 × 10−6 A/cm2). After 90 days of room-temperature ageing, the residual polarization strength (2Pr) of the film on the MgO substrate decreased by 16.8%, with a lower ageing degree and better stability.

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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