{"title":"温度对非晶硅和砷化镓/非晶硅半导体太阳能电池影响的数值研究","authors":"Nafissa Moussaoui, Lamia Benhamadouche, Abdelouahab Djoubair Benhamadouche","doi":"10.1007/s11664-024-11364-7","DOIUrl":null,"url":null,"abstract":"<p>There is a pressing need for investigations of solar conversion systems to enhance and perfect the use of this expandable energy resource. This necessitates additional research on the development of solar cells, which are the mainstay of these systems. In this regard, the purpose of this study is to examine, using numerical modeling, the impact of cell temperatures in the range of 270–340 K on solar cell performance and efficiency. Two configurations are considered based on different overlapping materials. A solar cell type ZnO/a-Si(n)/a-Si(p) (single-junction) with thickness of 25 nm, 50 nm, and 2500 nm, respectively, and a solar cell type ZnO/GaAs(p)/a-Si(n)/a-Si(p) (double-junction) with thickness of 25 nm, 100 nm, 50 nm, and 2500 nm, respectively, are examined. The electrical characteristics, fill factor (FF), and efficiency (ɳ) are extracted to highlight the results of the present study. Numerical analysis was performed using AMPS-1D (One-Dimensional Device Simulation for Analysis of Microelectronic and Photonic Structures), a modeling and analysis program. This analysis enabled the establishment of a causal relationship between the features of the considered solar cells and their corresponding material attributes, and the production process. After different adjustments and refinements, the results for the single-junction cell presented parameter values of <span>\\({J}_{\\text{SC}}=\\text{32.21 m}\\)</span> A/cm<sup>2</sup>, <span>\\({V}_{\\text{OC}}=\\text{0.81 V}\\)</span>, and FF = 0.75, resulting in efficiency of <i>ɳ</i> = 19.58%. For the double-junction cell, the analysis revealed parameter values of <span>\\({J}_{\\text{SC}}=\\text{37.75 mA}/{\\text{cm}}^{2}\\)</span>, <span>\\({V}_{\\text{OC}}=\\text{0.789 V}\\)</span>, and FF = 0.86, corresponding to efficiency of <i>ɳ</i> = 25.70%.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical Investigation of the Impact of Temperature on a-Si and GaAs/a-Si Semiconductor Solar Cells\",\"authors\":\"Nafissa Moussaoui, Lamia Benhamadouche, Abdelouahab Djoubair Benhamadouche\",\"doi\":\"10.1007/s11664-024-11364-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>There is a pressing need for investigations of solar conversion systems to enhance and perfect the use of this expandable energy resource. This necessitates additional research on the development of solar cells, which are the mainstay of these systems. In this regard, the purpose of this study is to examine, using numerical modeling, the impact of cell temperatures in the range of 270–340 K on solar cell performance and efficiency. Two configurations are considered based on different overlapping materials. A solar cell type ZnO/a-Si(n)/a-Si(p) (single-junction) with thickness of 25 nm, 50 nm, and 2500 nm, respectively, and a solar cell type ZnO/GaAs(p)/a-Si(n)/a-Si(p) (double-junction) with thickness of 25 nm, 100 nm, 50 nm, and 2500 nm, respectively, are examined. The electrical characteristics, fill factor (FF), and efficiency (ɳ) are extracted to highlight the results of the present study. Numerical analysis was performed using AMPS-1D (One-Dimensional Device Simulation for Analysis of Microelectronic and Photonic Structures), a modeling and analysis program. This analysis enabled the establishment of a causal relationship between the features of the considered solar cells and their corresponding material attributes, and the production process. After different adjustments and refinements, the results for the single-junction cell presented parameter values of <span>\\\\({J}_{\\\\text{SC}}=\\\\text{32.21 m}\\\\)</span> A/cm<sup>2</sup>, <span>\\\\({V}_{\\\\text{OC}}=\\\\text{0.81 V}\\\\)</span>, and FF = 0.75, resulting in efficiency of <i>ɳ</i> = 19.58%. For the double-junction cell, the analysis revealed parameter values of <span>\\\\({J}_{\\\\text{SC}}=\\\\text{37.75 mA}/{\\\\text{cm}}^{2}\\\\)</span>, <span>\\\\({V}_{\\\\text{OC}}=\\\\text{0.789 V}\\\\)</span>, and FF = 0.86, corresponding to efficiency of <i>ɳ</i> = 25.70%.</p>\",\"PeriodicalId\":626,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":\"16 1\",\"pages\":\"\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s11664-024-11364-7\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11364-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Numerical Investigation of the Impact of Temperature on a-Si and GaAs/a-Si Semiconductor Solar Cells
There is a pressing need for investigations of solar conversion systems to enhance and perfect the use of this expandable energy resource. This necessitates additional research on the development of solar cells, which are the mainstay of these systems. In this regard, the purpose of this study is to examine, using numerical modeling, the impact of cell temperatures in the range of 270–340 K on solar cell performance and efficiency. Two configurations are considered based on different overlapping materials. A solar cell type ZnO/a-Si(n)/a-Si(p) (single-junction) with thickness of 25 nm, 50 nm, and 2500 nm, respectively, and a solar cell type ZnO/GaAs(p)/a-Si(n)/a-Si(p) (double-junction) with thickness of 25 nm, 100 nm, 50 nm, and 2500 nm, respectively, are examined. The electrical characteristics, fill factor (FF), and efficiency (ɳ) are extracted to highlight the results of the present study. Numerical analysis was performed using AMPS-1D (One-Dimensional Device Simulation for Analysis of Microelectronic and Photonic Structures), a modeling and analysis program. This analysis enabled the establishment of a causal relationship between the features of the considered solar cells and their corresponding material attributes, and the production process. After different adjustments and refinements, the results for the single-junction cell presented parameter values of \({J}_{\text{SC}}=\text{32.21 m}\) A/cm2, \({V}_{\text{OC}}=\text{0.81 V}\), and FF = 0.75, resulting in efficiency of ɳ = 19.58%. For the double-junction cell, the analysis revealed parameter values of \({J}_{\text{SC}}=\text{37.75 mA}/{\text{cm}}^{2}\), \({V}_{\text{OC}}=\text{0.789 V}\), and FF = 0.86, corresponding to efficiency of ɳ = 25.70%.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.