A. D. Bouravleuv, A. N. Kazakin, Yu. A. Nashchekina, A. V. Nashchekin, E. V. Ubyyvovk, V. A. Astrahanceva, A. V. Osipov, G. V. Svyatec, S. A. Kukushkin
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It was found that the synthesis of silicon carbide epitaxial layers on silicon by coordinated substitution of atoms can be accompanied by the formation of silicon carbide nanotubes growing deep into silicon substrates. That is, for the first time discovered a new “top-down” mechanism for the formation of silicon carbide nanotubes.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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