L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov
{"title":"硅基 InP 纳米线生长的特点","authors":"L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov","doi":"10.1134/s1063782624030084","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Features of InP on Si Nanowire Growth\",\"authors\":\"L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov\",\"doi\":\"10.1134/s1063782624030084\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624030084\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624030084","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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