硅基 InP 纳米线生长的特点

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030084

L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov

{"title":"硅基 InP 纳米线生长的特点","authors":"L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov","doi":"10.1134/s1063782624030084","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"30 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Features of InP on Si Nanowire Growth\",\"authors\":\"L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov\",\"doi\":\"10.1134/s1063782624030084\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"30 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624030084\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624030084","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

摘要在具有 2-2.5 nm 天然氧化层的取向 (111) 硅衬底上，证明了在准封闭体积内从 V/III 比为 8-10 的饱和磷和铟蒸汽中生长 InP 纳米晶须的可能性。报告显示，在初始阶段形成的金-铟-磷催化液滴生长出 InP 纳米晶须。光学研究证实在硅表面形成了 InP 纳米结构。这些纳米结构显示出锡原子的高掺杂水平。

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Features of InP on Si Nanowire Growth

Abstract

The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.