F. I. Zubov, Yu. M. Shernyakov, A. A. Beckman, E. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maximov
{"title":"通过测量脉冲电流-电压特性确定半盘激光二极管的温度和热阻","authors":"F. I. Zubov, Yu. M. Shernyakov, A. A. Beckman, E. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maximov","doi":"10.1134/s1063782624020179","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A technique is proposed for determining the temperature of a laser diode operating in a continuous mode, as well as thermal resistance of the device by comparing its current-voltage characteristic with pulsed current-voltage characteristics measured at different temperatures. The technique was applied to a ∅200 μm half-disk microlaser with an active region based on InGaAs/GaAs quantum dots. It was found that at currents corresponding to the peak laser power and lasing quenching due to overheating of the active region, the device temperature reaches 101 and 149°C, respectively. The thermal resistance of the laser is 110 K/W.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics\",\"authors\":\"F. I. Zubov, Yu. M. Shernyakov, A. A. Beckman, E. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maximov\",\"doi\":\"10.1134/s1063782624020179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>A technique is proposed for determining the temperature of a laser diode operating in a continuous mode, as well as thermal resistance of the device by comparing its current-voltage characteristic with pulsed current-voltage characteristics measured at different temperatures. The technique was applied to a ∅200 μm half-disk microlaser with an active region based on InGaAs/GaAs quantum dots. It was found that at currents corresponding to the peak laser power and lasing quenching due to overheating of the active region, the device temperature reaches 101 and 149°C, respectively. The thermal resistance of the laser is 110 K/W.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624020179\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624020179","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics
Abstract
A technique is proposed for determining the temperature of a laser diode operating in a continuous mode, as well as thermal resistance of the device by comparing its current-voltage characteristic with pulsed current-voltage characteristics measured at different temperatures. The technique was applied to a ∅200 μm half-disk microlaser with an active region based on InGaAs/GaAs quantum dots. It was found that at currents corresponding to the peak laser power and lasing quenching due to overheating of the active region, the device temperature reaches 101 and 149°C, respectively. The thermal resistance of the laser is 110 K/W.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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