外腔中单模激光二极管微纹条（1050 nm）的横向模式选择

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-08-30 DOI:10.1134/s1063782624010135

A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko

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摘要

摘要研究了微条纹激光二极管棒在基于非球面透镜和平面介质镜的外部谐振器中的辐射特性。条形激光二极管的总发射孔径为 185 μm，由 10 条宽度为 6 μm 的条纹组成，条纹之间有间隙。通过限制参与光反馈的条纹数量，可以选择横向模态结构并过渡到单模态。通过在外部腔体中引入限制狭缝，研究了光模式重构的相关性。结果表明，将参与反馈的发射孔径限制在 65 μm 时，我们可以演示中心叶远场发散为 1° 的高阶单模运行。

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Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity

Abstract

Radiative characteristics of microstripe laser diode bar in an external resonator based on an aspherical lens and a flat dielectric mirror were Investigated. The bar had total emitting aperture of 185 μm, formed by 10 stripes with a width of 6 μm separated by mesa-grooves. Operation in the external resonator of the entire emitting aperture was characterized by a multimode generation regime with a peak power of 3 W/6 A. Selection of lateral modal structures and transition to a single-mode regime is possible by limiting the number of stripes involved in optical feedback. Dependences of optical mode reconfiguration were studied by introducing limiting slits into the external cavity. It was shown that limiting the emitting aperture involved in the feedback to 65 μm allows us to demonstrate high-order single-mode operation with far-field divergence for the central lobe of 1°.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.