{"title":"基于 XPS 和 REELS 的互补性原位测定砷化镓（1 1 1）A 上 InxGa1-x 纳米微滴中的铟/镓成分","authors":"","doi":"10.1016/j.apsusc.2024.161218","DOIUrl":null,"url":null,"abstract":"<div><p>This work provides a new tool based on the complementarity between X-ray Photoelectron Spectroscopy (XPS) and Reflection Electron Energy Loss Spectroscopy (REELS). More precisely, this study is focused on the <em>in situ</em> precise determination of indium and gallium composition of self-assembled In<sub>x</sub>Ga<sub>1-x</sub> nanodroplets on GaAs(1<!--> <!-->1<!--> <!-->1)A substrate during the first stage of III-V quantum dots growth by droplet epitaxy. An XPS intensity model based on In4d and Ga3d core levels enables the estimation of the gallium/indium ratio within the droplets under the assumption of a homogeneous droplet. On the other hand, we develop a brand new decomposition methodology of loss probabilities curves obtained from REELS spectra for droplets deposited on a substrate. The energy of In<sub>x</sub>Ga<sub>1-x</sub> bulk plasmon experimentally obtained and semi-empirically modelled allows to calculate from REELS the indium-gallium composition in the droplet. Comparison between these values obtained by both XPS and REELS provides information about In/Ga mixing to grow binary In<sub>x</sub>Ga<sub>1-x</sub> nanodroplets. Their good agreement shows promising results for the growth of In<sub>x</sub>Ga<sub>1-x</sub>N quantum dots by droplet epitaxy for a very large range of composition.</p></div>","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":null,"pages":null},"PeriodicalIF":6.3000,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0169433224019329/pdfft?md5=e641cdff7f36c6a6c007b4611601e55d&pid=1-s2.0-S0169433224019329-main.pdf","citationCount":"0","resultStr":"{\"title\":\"In situ determination of indium/gallium composition in InxGa1-x nanodroplets on GaAs(1 1 1)A based on the complementarity between XPS and REELS\",\"authors\":\"\",\"doi\":\"10.1016/j.apsusc.2024.161218\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This work provides a new tool based on the complementarity between X-ray Photoelectron Spectroscopy (XPS) and Reflection Electron Energy Loss Spectroscopy (REELS). More precisely, this study is focused on the <em>in situ</em> precise determination of indium and gallium composition of self-assembled In<sub>x</sub>Ga<sub>1-x</sub> nanodroplets on GaAs(1<!--> <!-->1<!--> <!-->1)A substrate during the first stage of III-V quantum dots growth by droplet epitaxy. An XPS intensity model based on In4d and Ga3d core levels enables the estimation of the gallium/indium ratio within the droplets under the assumption of a homogeneous droplet. On the other hand, we develop a brand new decomposition methodology of loss probabilities curves obtained from REELS spectra for droplets deposited on a substrate. The energy of In<sub>x</sub>Ga<sub>1-x</sub> bulk plasmon experimentally obtained and semi-empirically modelled allows to calculate from REELS the indium-gallium composition in the droplet. Comparison between these values obtained by both XPS and REELS provides information about In/Ga mixing to grow binary In<sub>x</sub>Ga<sub>1-x</sub> nanodroplets. Their good agreement shows promising results for the growth of In<sub>x</sub>Ga<sub>1-x</sub>N quantum dots by droplet epitaxy for a very large range of composition.</p></div>\",\"PeriodicalId\":247,\"journal\":{\"name\":\"Applied Surface Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2024-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S0169433224019329/pdfft?md5=e641cdff7f36c6a6c007b4611601e55d&pid=1-s2.0-S0169433224019329-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Surface Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0169433224019329\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0169433224019329","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
In situ determination of indium/gallium composition in InxGa1-x nanodroplets on GaAs(1 1 1)A based on the complementarity between XPS and REELS
This work provides a new tool based on the complementarity between X-ray Photoelectron Spectroscopy (XPS) and Reflection Electron Energy Loss Spectroscopy (REELS). More precisely, this study is focused on the in situ precise determination of indium and gallium composition of self-assembled InxGa1-x nanodroplets on GaAs(1 1 1)A substrate during the first stage of III-V quantum dots growth by droplet epitaxy. An XPS intensity model based on In4d and Ga3d core levels enables the estimation of the gallium/indium ratio within the droplets under the assumption of a homogeneous droplet. On the other hand, we develop a brand new decomposition methodology of loss probabilities curves obtained from REELS spectra for droplets deposited on a substrate. The energy of InxGa1-x bulk plasmon experimentally obtained and semi-empirically modelled allows to calculate from REELS the indium-gallium composition in the droplet. Comparison between these values obtained by both XPS and REELS provides information about In/Ga mixing to grow binary InxGa1-x nanodroplets. Their good agreement shows promising results for the growth of InxGa1-xN quantum dots by droplet epitaxy for a very large range of composition.
期刊介绍：
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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