Novel Latin square matrix code of large burst error correction for MRAM applications

With the scaling down of the technology node of complementary metal–oxide–semiconductor (CMOS) , the bit error rate (BER) of magnetic random memory (MRAM) seriously threats the reliability, especially multiple-cell upset (MBUs). Error correction codes (ECCs) such as one-step majority logic decodable (OS-MLD) codes are proposed with strong error correction capabilities, and efficient hardware overhead. However, the OS-MLD codes are not suitable for the burst error correction, which require more redundancy bits or extra memory cells. A novel m order Latin square matrix (LSM) codes for MRAM are presented, which can provide fewer equivalent bits and more flexible adjustments for correcting large burst errors. The 5-bit LSM code area is only 90898.71 $\mu m^2$, and the power consumption is only 0.82 mw.