碲镉汞梯度带隙异质结构的光调节光学光谱学

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050087
O. S. Komkov, M. V. Yakushev
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引用次数: 0

摘要

摘要 利用红外光反射法研究了在硅和砷化镓衬底上通过分子束外延生长的多层汞-镉-碲化镉光探测异质结构。根据光反射光谱中观察到的弗朗兹-凯尔迪什振荡周期,以非接触方式确定了 "工作层-分级带隙近表面层 "异质界面附近的内置电场强度。通过对这种电场在结构深度上的分布进行分析计算,确定了形成光调制信号的区域。实验得出的场值高于计算得出的场值,其原因在于光生伏打效应的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures

Abstract—

Multilayer mercury–cadmium–telluride photodetecting heterostructures grown by molecular beam epitaxy on Si and GaAs substrates were studied using the infrared photoreflectance method. Based on the period of Franz–Keldysh oscillations observed in the photoreflectance spectra, the strength of the built-in electric field near the “working layer—graded band gap near-surface layer” heterointerface was determined in a contactless way. An analytical calculation of distribution of such field over the structure depth has specified the region in which the photomodulation signal is formed. The experimentally obtained field values turned out to be higher than the calculated ones, which is explained by the influence of the photovoltaic effect.

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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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