A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein
{"title":"质子和电子辐照对氮化镓肖特基二极管参数的影响","authors":"A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein","doi":"10.1134/s1063782624050105","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The carrier removal rates during proton and electron irradiations of <i>n</i>-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Ф<sub><i>р</i></sub> ≤ 5 × 10<sup>14</sup> cm<sup>–2</sup>; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Ф<sub><i>n</i></sub> ≤ 5 × 10<sup>16</sup> cm<sup>–2</sup>. The value of the removal rate during proton irradiation, η<sub><i>p</i></sub> ≈ 140 cm<sup>–1</sup>, is close to the lower limit of currently known values of η<sub><i>p</i></sub> and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, η<sub><i>e</i></sub> is ≈0.47 cm<sup>–1</sup> and corresponds to the typical values of η<sub><i>e</i></sub> for type gallium nitride obtained by various methods.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes\",\"authors\":\"A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein\",\"doi\":\"10.1134/s1063782624050105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The carrier removal rates during proton and electron irradiations of <i>n</i>-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Ф<sub><i>р</i></sub> ≤ 5 × 10<sup>14</sup> cm<sup>–2</sup>; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Ф<sub><i>n</i></sub> ≤ 5 × 10<sup>16</sup> cm<sup>–2</sup>. The value of the removal rate during proton irradiation, η<sub><i>p</i></sub> ≈ 140 cm<sup>–1</sup>, is close to the lower limit of currently known values of η<sub><i>p</i></sub> and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, η<sub><i>e</i></sub> is ≈0.47 cm<sup>–1</sup> and corresponds to the typical values of η<sub><i>e</i></sub> for type gallium nitride obtained by various methods.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624050105\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050105","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes
Abstract
The carrier removal rates during proton and electron irradiations of n-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Фр ≤ 5 × 1014 cm–2; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Фn ≤ 5 × 1016 cm–2. The value of the removal rate during proton irradiation, ηp ≈ 140 cm–1, is close to the lower limit of currently known values of ηp and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, ηe is ≈0.47 cm–1 and corresponds to the typical values of ηe for type gallium nitride obtained by various methods.
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