A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein
{"title":"质子和电子辐照对氮化镓肖特基二极管参数的影响","authors":"A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein","doi":"10.1134/s1063782624050105","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The carrier removal rates during proton and electron irradiations of <i>n</i>-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Ф<sub><i>р</i></sub> ≤ 5 × 10<sup>14</sup> cm<sup>–2</sup>; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Ф<sub><i>n</i></sub> ≤ 5 × 10<sup>16</sup> cm<sup>–2</sup>. The value of the removal rate during proton irradiation, η<sub><i>p</i></sub> ≈ 140 cm<sup>–1</sup>, is close to the lower limit of currently known values of η<sub><i>p</i></sub> and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, η<sub><i>e</i></sub> is ≈0.47 cm<sup>–1</sup> and corresponds to the typical values of η<sub><i>e</i></sub> for type gallium nitride obtained by various methods.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"12 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes\",\"authors\":\"A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein\",\"doi\":\"10.1134/s1063782624050105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The carrier removal rates during proton and electron irradiations of <i>n</i>-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Ф<sub><i>р</i></sub> ≤ 5 × 10<sup>14</sup> cm<sup>–2</sup>; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Ф<sub><i>n</i></sub> ≤ 5 × 10<sup>16</sup> cm<sup>–2</sup>. The value of the removal rate during proton irradiation, η<sub><i>p</i></sub> ≈ 140 cm<sup>–1</sup>, is close to the lower limit of currently known values of η<sub><i>p</i></sub> and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, η<sub><i>e</i></sub> is ≈0.47 cm<sup>–1</sup> and corresponds to the typical values of η<sub><i>e</i></sub> for type gallium nitride obtained by various methods.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"12 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624050105\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050105","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes
Abstract
The carrier removal rates during proton and electron irradiations of n-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Фр ≤ 5 × 1014 cm–2; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Фn ≤ 5 × 1016 cm–2. The value of the removal rate during proton irradiation, ηp ≈ 140 cm–1, is close to the lower limit of currently known values of ηp and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, ηe is ≈0.47 cm–1 and corresponds to the typical values of ηe for type gallium nitride obtained by various methods.
期刊介绍：
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
