掺砷的 Cd0.3Hg0.7Te 外延薄膜的光致发光特性

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040122

M. S. Ruzhevich, D. D. Firsov, O. S. Komkov, K. D. Mynbaev, V. S. Varavin, M. V. Yakushev

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引用次数: 0

摘要

摘要介绍了通过分子束外延在硅基底上生长的掺砷 Cd0.3Hg0.7Te 固溶体层的光致发光（PL）研究结果。通过分析在不同温度和激发激光功率下获得的光致发光光谱，可以判断观察到的峰值的性质。确定了退火样品中砷的活化作用，其结果是形成了小的受体水平。砷作为镉汞碲化物的受体杂质的有效性已得到证实。

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Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Abstract

The results of photoluminescence (PL) study of As-doped Cd_0.3Hg_0.7Te solid solutions layers grown by molecular beam epitaxy on a Si substrate are presented. Analysis of the PL spectra obtained at different temperatures and excitation laser powers allows one to judge the nature of the observed peaks. The activation of arsenic in annealed samples was established, as a result of which small acceptor levels are formed. The effectiveness of arsenic as an acceptor impurity for cadmium-mercury tellurides has been confirmed.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.