通过升华 Ge 源的杂质蒸发在 HW CVD 过程中掺杂 Ge/Si(001)异外延层

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040158

A. M. Titova, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, A. V. Zaitsev, N. A. Alyabina, A. V. Kudrin, A. V. Zdoroveishev

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引用次数: 0

摘要

摘要 Ge/Si(001)异质外延层是通过 HW CVD 法生长的，并使用含有其中一种杂质的单独电阻加热 Ge 源原位掺入 Ga 或 Sb。锗源升华后，层中的镓原子浓度为 ~1 × 1019 cm-3。利用 C-V 和霍尔效应，研究了这种杂质引入外延层的模式与热丝（Ta）温度和生长温度的函数关系。为了提高 Ge/Si(001)层中电荷载流子的最大浓度，在层的生长过程中在 Ge 源上形成了一个熔区，这使得 Ge 层中的杂质浓度提高了近一个数量级。

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Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source

Abstract

Ge/Si(001) heteroepitaxial layers were grown by HW CVD and in situ doped with Ga or Sb using a separate resistively heated Ge source containing one of these impurities. Sublimation of the germanium source gave a concentration of ~1 × 10¹⁹ cm^–3 gallium atoms in the layers. The mode of introduction of this impurity into the epitaxial layers was investigated as a function of hot filament (Ta) temperature and growth temperature using C–V and Hall effect. To increase the maximum concentration of charge carriers in the Ge/Si(001) layers, a melt zone was formed on the Ge source during the growth of the layers, which made it possible to increase the concentration of impurities in the Ge layer by almost an order of magnitude.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.