新型金属硅同素异形体的计算预测

IF 3.1 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Computational Materials Science Pub Date : 2024-09-20 DOI:10.1016/j.commatsci.2024.113380
Jiaqi Wang , Chunxiang Zhao , Chong Li , Chunyao Niu , Yu Jia
{"title":"新型金属硅同素异形体的计算预测","authors":"Jiaqi Wang ,&nbsp;Chunxiang Zhao ,&nbsp;Chong Li ,&nbsp;Chunyao Niu ,&nbsp;Yu Jia","doi":"10.1016/j.commatsci.2024.113380","DOIUrl":null,"url":null,"abstract":"<div><div>Silicon, a crucial element in modern technological advancements, significantly contributes to various sectors such as electronics and solar energy conversion systems. The need to investigate novel silicon materials with promising applications is on the rise, leading to the identification of various new silicon allotropes. By first-principles calculations, we identify a new silicon phase in <span><math><mrow><mi>R</mi><mover><mrow><mn>3</mn></mrow><mrow><mo>̄</mo></mrow></mover></mrow></math></span> (<span><math><msubsup><mrow><mi>C</mi></mrow><mrow><mn>3</mn><mi>i</mi></mrow><mrow><mn>2</mn></mrow></msubsup></math></span>) symmetry, which has a rhombohedral primitive cell with 7 silicon atoms, thus termed as R-Si7. The dynamic and thermal stabilities of R-Si7 have been verified by phonon mode analysis and <em>ab initio</em> molecular dynamics simulations, respectively. The mechanic properties of this new silicon allotrope has also been investigated. The X-ray diffraction patterns have been simulated and provided more structural information of R-Si7. Besides, the calculated electronic band structures and projected density of states show that R-Si7 is a metallic silicon material, and its conductivity mainly stems from the <span><math><mi>p</mi></math></span>-orbital electrons of silicon. These results pave the way for further exploration of this new silicon phase and its outstanding properties.</div></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1000,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Computational prediction of a new metallic silicon allotrope\",\"authors\":\"Jiaqi Wang ,&nbsp;Chunxiang Zhao ,&nbsp;Chong Li ,&nbsp;Chunyao Niu ,&nbsp;Yu Jia\",\"doi\":\"10.1016/j.commatsci.2024.113380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Silicon, a crucial element in modern technological advancements, significantly contributes to various sectors such as electronics and solar energy conversion systems. The need to investigate novel silicon materials with promising applications is on the rise, leading to the identification of various new silicon allotropes. By first-principles calculations, we identify a new silicon phase in <span><math><mrow><mi>R</mi><mover><mrow><mn>3</mn></mrow><mrow><mo>̄</mo></mrow></mover></mrow></math></span> (<span><math><msubsup><mrow><mi>C</mi></mrow><mrow><mn>3</mn><mi>i</mi></mrow><mrow><mn>2</mn></mrow></msubsup></math></span>) symmetry, which has a rhombohedral primitive cell with 7 silicon atoms, thus termed as R-Si7. The dynamic and thermal stabilities of R-Si7 have been verified by phonon mode analysis and <em>ab initio</em> molecular dynamics simulations, respectively. The mechanic properties of this new silicon allotrope has also been investigated. The X-ray diffraction patterns have been simulated and provided more structural information of R-Si7. Besides, the calculated electronic band structures and projected density of states show that R-Si7 is a metallic silicon material, and its conductivity mainly stems from the <span><math><mi>p</mi></math></span>-orbital electrons of silicon. These results pave the way for further exploration of this new silicon phase and its outstanding properties.</div></div>\",\"PeriodicalId\":10650,\"journal\":{\"name\":\"Computational Materials Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2024-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Computational Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0927025624006013\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computational Materials Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927025624006013","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

硅是现代技术进步的重要元素,对电子和太阳能转换系统等各个领域都有重大贡献。研究具有广阔应用前景的新型硅材料的需求与日俱增,从而导致了各种新型硅同素异形体的发现。通过第一性原理计算,我们发现了一种新的 R3̄(C3i2)对称硅相,它具有一个包含 7 个硅原子的斜方晶胞,因此被称为 R-Si7。声子模式分析和原子分子动力学模拟分别验证了 R-Si7 的动态稳定性和热稳定性。此外,还研究了这种新型硅同素异形体的力学性能。模拟的 X 射线衍射图样提供了 R-Si7 的更多结构信息。此外,计算得出的电子能带结构和投影态密度表明,R-Si7 是一种金属硅材料,其导电性主要源于硅的 p 轨道电子。这些结果为进一步探索这种新的硅相及其优异性能铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Computational prediction of a new metallic silicon allotrope
Silicon, a crucial element in modern technological advancements, significantly contributes to various sectors such as electronics and solar energy conversion systems. The need to investigate novel silicon materials with promising applications is on the rise, leading to the identification of various new silicon allotropes. By first-principles calculations, we identify a new silicon phase in R3̄ (C3i2) symmetry, which has a rhombohedral primitive cell with 7 silicon atoms, thus termed as R-Si7. The dynamic and thermal stabilities of R-Si7 have been verified by phonon mode analysis and ab initio molecular dynamics simulations, respectively. The mechanic properties of this new silicon allotrope has also been investigated. The X-ray diffraction patterns have been simulated and provided more structural information of R-Si7. Besides, the calculated electronic band structures and projected density of states show that R-Si7 is a metallic silicon material, and its conductivity mainly stems from the p-orbital electrons of silicon. These results pave the way for further exploration of this new silicon phase and its outstanding properties.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Computational Materials Science
Computational Materials Science 工程技术-材料科学:综合
CiteScore
6.50
自引率
6.10%
发文量
665
审稿时长
26 days
期刊介绍: The goal of Computational Materials Science is to report on results that provide new or unique insights into, or significantly expand our understanding of, the properties of materials or phenomena associated with their design, synthesis, processing, characterization, and utilization. To be relevant to the journal, the results should be applied or applicable to specific material systems that are discussed within the submission.
期刊最新文献
Nanodroplet bouncing behaviors of bonded graphene-carbon nanotube hybrid film Atomistic simulation and machine learning predictions of mechanical response in nanotube-polymer composites considering filler morphology and aggregation High throughput screening of new piezoelectric materials using graph machine learning and knowledge graph approach MicroSim: A high-performance phase-field solver based on CPU and GPU implementations Introducing Materials Fingerprint (MatPrint): A novel method in graphical material representation and features compression
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1