适用于动态耗尽型 SOI MOS 器件的表面电势方程（考虑了前耗尽/后积累工作模式

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-10-10 DOI:10.1016/j.sse.2024.109010

{"title":"适用于动态耗尽型 SOI MOS 器件的表面电势方程（考虑了前耗尽/后积累工作模式","authors":"","doi":"10.1016/j.sse.2024.109010","DOIUrl":null,"url":null,"abstract":"<div><div>This paper provides an improved surface potential equation for compact modeling of dynamically depleted silicon-on-insulator MOS device. It removes the non-physical front-gate capacitance prediction and the discontinuity at the flat-band condition present in previous works. It also includes for the first time the back gate effect observed at negative back gate voltage when the silicon film is partially depleted. It relies on, firstly, an approximated description of the front-depletion/back-accumulation mode of operation that has always been ignored by now, and secondly, an appropriate mathematical conditioning. The model is validated by 3D TCAD simulations.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode\",\"authors\":\"\",\"doi\":\"10.1016/j.sse.2024.109010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper provides an improved surface potential equation for compact modeling of dynamically depleted silicon-on-insulator MOS device. It removes the non-physical front-gate capacitance prediction and the discontinuity at the flat-band condition present in previous works. It also includes for the first time the back gate effect observed at negative back gate voltage when the silicon film is partially depleted. It relies on, firstly, an approximated description of the front-depletion/back-accumulation mode of operation that has always been ignored by now, and secondly, an appropriate mathematical conditioning. The model is validated by 3D TCAD simulations.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S003811012400159X\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S003811012400159X","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文为动态耗尽型硅绝缘体 MOS 器件的紧凑建模提供了一种改进的表面电势方程。它消除了之前工作中存在的非物理前栅极电容预测和平带条件下的不连续性。它还首次包含了硅薄膜部分耗尽时在负后栅电压下观察到的后栅效应。首先，它依赖于对迄今为止一直被忽视的前耗尽/后累积工作模式的近似描述；其次，它依赖于适当的数学条件。三维 TCAD 仿真验证了该模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode

This paper provides an improved surface potential equation for compact modeling of dynamically depleted silicon-on-insulator MOS device. It removes the non-physical front-gate capacitance prediction and the discontinuity at the flat-band condition present in previous works. It also includes for the first time the back gate effect observed at negative back gate voltage when the silicon film is partially depleted. It relies on, firstly, an approximated description of the front-depletion/back-accumulation mode of operation that has always been ignored by now, and secondly, an appropriate mathematical conditioning. The model is validated by 3D TCAD simulations.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.