{"title":"与砷化镓纳米线耦合的 InGaAs/GaAs 量子点的位控和能控增强光子发射","authors":"Benjamin Dwir","doi":"10.1016/j.optlastec.2024.111934","DOIUrl":null,"url":null,"abstract":"<div><div>InGaAs/GaAs quantum dots (QDs) embedded in a GaAs substrate are very useful photon sources, including single and entangled photons, due to their unperturbed environment. Contrary to self-formed QDs, those grown in pyramidal pits can be well controlled in position and energy, important properties for scaling. However, photon extraction efficiency from these QDs is limited due to the GaAs/Air index mismatch and non-directionality of the emission. GaAs nanowires grown vertically on top of these QDs can serve as resonant antennas, thus enhancing their emission and increasing their usefulness as sources. Such structures were fabricated and their photon emission was studied by micro-photoluminescence as function of excitation power and temperature. The structures showed an intensity increase by up to x36 over quantum dots without nanowire antennas.</div></div>","PeriodicalId":19511,"journal":{"name":"Optics and Laser Technology","volume":"181 ","pages":"Article 111934"},"PeriodicalIF":4.6000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced photon emission from site- and energy-controlled InGaAs/GaAs quantum dots coupled to GaAs nanowires\",\"authors\":\"Benjamin Dwir\",\"doi\":\"10.1016/j.optlastec.2024.111934\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>InGaAs/GaAs quantum dots (QDs) embedded in a GaAs substrate are very useful photon sources, including single and entangled photons, due to their unperturbed environment. Contrary to self-formed QDs, those grown in pyramidal pits can be well controlled in position and energy, important properties for scaling. However, photon extraction efficiency from these QDs is limited due to the GaAs/Air index mismatch and non-directionality of the emission. GaAs nanowires grown vertically on top of these QDs can serve as resonant antennas, thus enhancing their emission and increasing their usefulness as sources. Such structures were fabricated and their photon emission was studied by micro-photoluminescence as function of excitation power and temperature. The structures showed an intensity increase by up to x36 over quantum dots without nanowire antennas.</div></div>\",\"PeriodicalId\":19511,\"journal\":{\"name\":\"Optics and Laser Technology\",\"volume\":\"181 \",\"pages\":\"Article 111934\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2024-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics and Laser Technology\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0030399224013926\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics and Laser Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030399224013926","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
Enhanced photon emission from site- and energy-controlled InGaAs/GaAs quantum dots coupled to GaAs nanowires
InGaAs/GaAs quantum dots (QDs) embedded in a GaAs substrate are very useful photon sources, including single and entangled photons, due to their unperturbed environment. Contrary to self-formed QDs, those grown in pyramidal pits can be well controlled in position and energy, important properties for scaling. However, photon extraction efficiency from these QDs is limited due to the GaAs/Air index mismatch and non-directionality of the emission. GaAs nanowires grown vertically on top of these QDs can serve as resonant antennas, thus enhancing their emission and increasing their usefulness as sources. Such structures were fabricated and their photon emission was studied by micro-photoluminescence as function of excitation power and temperature. The structures showed an intensity increase by up to x36 over quantum dots without nanowire antennas.
期刊介绍：
Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication.
The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas:
•development in all types of lasers
•developments in optoelectronic devices and photonics
•developments in new photonics and optical concepts
•developments in conventional optics, optical instruments and components
•techniques of optical metrology, including interferometry and optical fibre sensors
•LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow
•applications of lasers to materials processing, optical NDT display (including holography) and optical communication
•research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume)
•developments in optical computing and optical information processing
•developments in new optical materials
•developments in new optical characterization methods and techniques
•developments in quantum optics
•developments in light assisted micro and nanofabrication methods and techniques
•developments in nanophotonics and biophotonics
•developments in imaging processing and systems
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