介孔 NiS/YVO4 S 型异质结构光催化剂在可见光照射下绿色制备苯胺

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-10-30 DOI:10.1016/j.mssp.2024.109064
Soad Z. Alsheheri , Tamer M. Khedr
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引用次数: 0

摘要

对危险的硝基苯(NTB)进行光催化加氢可以高效、安全地生成苯胺(AN),而苯胺具有相当大的经济意义。系统开发能有效利用太阳光谱的超强可见光光催化物质至关重要。本文首先采用嵌段共聚物辅助溶胶-凝胶协议组装了介孔 YVO4 纳米结构晶体,然后通过超声波自生长和煅烧与 NiS 纳米颗粒(4.0-16.0 wt%)结合,设计出介孔阶梯型(S 型)NiS/YVO4(N/Y)异质结构光催化剂。详细的表征证实了所设计的异质结构材料具有强大的界面相互作用和有效的 S 型电荷传输。此外,光学和光电化学实验还揭示了卓越的光收集能力和更高的电荷分离效率。得益于 S 型异质结构的构建,N/Y 异质结构材料的光催化性能明显优于原始 YVO4。具体来说,在可见光照射 50 分钟的条件下,最佳材料(12.0 % N/Y)的最佳用量(2.4 g/L)实现了将 NTB 100 % 选择性光转化为 AN,速率常数(K)为 0.0696 min-1,比原始 YVO4(0.0015 min-1)高出 46.4 倍。12.0 % N/Y 异质结构还显示出极佳的循环稳定性,在连续五次运行中大部分时间都保持了显著的功效。催化剂含量对 12.0 % N/Y 的 NTB 光还原有积极影响,催化剂用量的改变证实了这一点。此外,根据莫特-肖特基(M - S)测量结果,提出了 12.0% N/Y 异质结构的电荷迁移途径。目前的研究成果为开发高效、稳定的光催化物质提供了可贵的启示。
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Green fabrication of aniline over mesoporous NiS/YVO4 S-type heterostructure photocatalyst under visible light exposure
The photocatalytic hydrogenation of hazardous nitrobenzene (NTB) can efficiently and safely yield aniline (AN), which holds considerable economic significance. The systematic development of superb visible light-proceeded photocatalytic substances that effectively harness the sun spectrum is crucial. In this contribution, mesoporous YVO4 nanostructured crystals were first assembled employing block copolymer-aided sol-gel protocol and then coupled with NiS nanoparticles (NPs) (4.0–16.0 wt%) through ultrasonic self-growth and calcination to design mesoporous step-type (S-type) NiS/YVO4 (N/Y) heterostructure photocatalysts. A detailed characterization substantiated powerful interface interaction and effective S-type charge transmission in the designed heterostructured materials. Moreover, optical and photoelectrochemical experiments unveiled superb light harvesting and improved charge separation efficiencies. Thanking the building of the S-type heterostructure, the N/Y heterostructure materials recorded notable photocatalytic proficiency than pristine YVO4. Specifically, under exposure to visible light for 50 min, the optimal material (12.0 % N/Y) at the best dosage (2.4 g/L) achieved 100 % selective phototransformation of NTB into AN with a rate constant (K) of 0.0696 min−1, superior to pristine YVO4 (0.0015 min−1) by a factor of 46.4. The 12.0 % N/Y heterostructure also indicated superb cyclic stability, mostly retaining its remarkable efficacy over five consecutive runs. The positive influence of the catalyst content on the NTB photoreduction on 12.0 % N/Y was examined and affirmed by the catalyst dosage alteration. Additionally, based on Mott-Schottky (M − S) measurements, the pathway of charge migration for 12.0 % N/Y heterostructure was suggested. The current contribution offers estimable insights into developing highly effective and stable photocatalytic substances.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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