用于 DRA 应用的 (1-x)MgTiO3 - xCa0.5Sr0.5TiO3 陶瓷的晶体结构、键合特性和微波介电性能的相关性

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-04 DOI:10.1016/j.mssp.2024.109061
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引用次数: 0

摘要

在本研究中,我们报告了 Ca0.5Sr0.5TiO3 对 MgTiO3 包晶体陶瓷的晶体结构、微观结构和微波区域介电性能的影响,其标准公式为 (1-x)MgTiO3-xCa0.5Sr0.5TiO3 [x = 0.025-0.1](简称 (1-x)MTO-xCSTO)。样品采用著名的固态反应路线制备。利用 X 射线衍射和 Rietveld 精炼技术对晶体结构进行了分析,证实了该成分中存在双相。扫描电子显微镜技术用于检查材料的晶体结构和微观结构特征。扫描电子显微镜图像验证了 (1-x)MTO-xCSTO 材料致密均匀的微观结构。拉曼光谱确定了与成分相关的各种振动模式,光谱宽度的变化与介电性能相关。介电参数由矢量网络分析仪获得,温度系数(共振频率)和品质因数由 (1-x)MTO-xCSTO 复合物的 TE01δ 模式获得。样品的键合强度、键合价和公差系数与品质因数和温度系数相关。(1-x)MTO-xCSTO 组合物的温度系数线性为零,因而具有优异的热稳定性。品质因数随 Ca0.5Sr0.5TiO3 的变化而变化,这与拉曼光谱宽度的变化有关。此外,还分析了最佳成分的红外反射光谱,并使用标准谐振子模型确定了各种声子模式。此外,还开发了以 (1-x)MTO-xCSTO 陶瓷为谐振器的介质谐振器天线,并利用 HFSS 软件分析了天线的几个参数。观察到的微波介电性能和天线特性表明,(1-x)MTO-xCSTO(x = 0.05)成分可以成为工作在 C 频段的 5G 应用中的一种重要介质谐振器。
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Correlation of the crystal structure, bond characteristics, and microwave dielectric properties of (1-x)MgTiO3 – xCa0.5Sr0.5TiO3 ceramic for DRA applications
In this current work, we report the impact of Ca0.5Sr0.5TiO3 in the crystal structures, microstructures, and the dielectric performances in the microwave region on MgTiO3 perovskite ceramic with standard formula of (1-x)MgTiO3-xCa0.5Sr0.5TiO3 [x = 0.025–0.1] (referred to as (1-x)MTO-xCSTO). The samples were prepared by employing the well-known solid-state reaction route. The crystal structure analysis was carried out using X-ray diffraction and Rietveld refinement confirms the existence of a dual phase in the composition. Scanning electron microscope techniques have been utilized to examine the crystal structure and microstructural characteristics of materials. The dense and homogeneous microstructures of (1-x)MTO-xCSTO materials have been verified by the SEM images. The various vibrational modes associated with the composition were identified from the Raman spectroscopy and the variation of the width of the spectra is correlated with the dielectric performance. The dielectric parameters were obtained from the vector network analyzer and the temperature coefficient (at the resonating frequency) and quality factor from the TE01δ mode of (1-x)MTO-xCSTO compound. The bond strength, bond valency, and tolerance factor of the samples were correlated with the quality factor and temperature coefficient. The (1-x)MTO-xCSTO composition exhibits exceptional thermal stability due to a linearly zero temperature coefficient. The variation of quality factor with the variation of Ca0.5Sr0.5TiO3 was correlated with the variation of the width of the Raman spectra. Among all the compositions, x = 0.05 shows a high-quality factor and nearly zero temperature coefficient.
Further, the infrared reflectance spectra of the optimum composition have been analyzed and the various phonon modes were identified using the standard harmonic oscillator model. Furthermore, the dielectric resonator antenna has been developed with (1-x)MTO-xCSTO ceramics as resonators, and several antenna parameters have been analyzed by HFSS software. The observed microwave dielectric properties and the antenna characteristics indicate that the (1-x)MTO-xCSTO (for x = 0.05) composition can be a prominent dielectric resonator for 5G applications operating at the C frequency band.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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