Paul Crump;Anisuzzaman Boni;Mohamed Elattar;S. K. Khamari;Igor P. Marko;Stephen J. Sweeney;Seval Arslan;Ben King;Md. Jarez Miah;Dominik Martin;Andrea Knigge;Pietro Della Casa;Günther Tränkle
{"title":"基于砷化镓的边缘发光大功率二极管激光器的功率和效率扩展","authors":"Paul Crump;Anisuzzaman Boni;Mohamed Elattar;S. K. Khamari;Igor P. Marko;Stephen J. Sweeney;Seval Arslan;Ben King;Md. Jarez Miah;Dominik Martin;Andrea Knigge;Pietro Della Casa;Günther Tränkle","doi":"10.1109/JSTQE.2024.3484669","DOIUrl":null,"url":null,"abstract":"Current progress in the scaling of continuous wave optical output power and conversion efficiency of broad-area GaAs-based edge emitters, broad-area lasers (BALs), operating in the 900…1000 nm wavelength range is presented. Device research and engineering efforts have ensured that BALs remain the most efficient of all light sources, so that in the past 10 years, power conversion efficiency at 20 W continuous wave (CW) output power from BA lasers with a 90…100 μm wide stripe has increased 1.5-fold to 57% (via epitaxial layer design developments), whilst peak CW power per single emitter has increased around 3-fold to 70 W (via scaling of device size), with further scaling underway, for example via use of multi-junction designs. However, the peak achievable CW power conversion efficiency and CW specific output power (defined here as peak output power from a 100 μm stripe diode lasers with a single p-n junction) has changed remarkably little, remaining around 70% and 25 W, respectively, for the past decade. Fortunately, research to understand the limits to peak efficiency and specific output power has also shown progress. Specifically, recent studies indicate that spatial non-uniformity in optical field and temperature play a major role in limiting both power and conversion efficiency. Technological efforts motivated by these discoveries to flatten lateral and longitudinal temperature profiles have successfully increased both power and efficiency. In addition, epitaxial layer designs with very high modal gain successfully reduce threshold current and increase slope at 25 °C to values comparable to those observed at 200 K, offering a path toward the 80% conversion efficiency range currently seen only at these cryogenic temperatures. 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引用次数: 0
摘要
本文介绍了在 900...1000 纳米波长范围内工作的基于砷化镓的广域边缘发射器--广域激光器 (BAL) 的连续波光输出功率和转换效率的扩展方面的最新进展。器件研究和工程设计工作确保了 BALs 始终是所有光源中效率最高的光源,因此在过去 10 年中,具有 90...100 μm 宽条纹的 BA 激光器在 20 W 连续波 (CW) 输出功率下的功率转换效率提高了 1.5 倍,达到 57%(通过外延层设计开发),而单个发射器的峰值 CW 功率提高了约 3 倍,达到 70 W(通过器件尺寸扩展),并且还在进一步扩展,例如通过使用多结设计。然而,可实现的峰值 CW 功率转换效率和 CW 特定输出功率(此处定义为具有单 p-n 结的 100 μm 条纹二极管激光器的峰值输出功率)却变化甚微,在过去十年中分别保持在 70% 和 25 W 左右。幸运的是,了解峰值效率和特定输出功率极限的研究也取得了进展。具体来说,最近的研究表明,光场和温度的空间不均匀性在限制功率和转换效率方面发挥了重要作用。在这些发现的推动下,平整横向和纵向温度曲线的技术努力已成功提高了功率和效率。此外,具有极高模态增益的外延层设计成功地降低了阈值电流,并将 25 °C 时的斜率提高到与 200 K 时观察到的数值相当,为实现目前只有在这些低温条件下才能看到的 80% 转换效率范围提供了一条途径。总之,在工作效率和功率继续快速增长的同时,提高比功率和峰值效率的技术途径也正在出现。
Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers
Current progress in the scaling of continuous wave optical output power and conversion efficiency of broad-area GaAs-based edge emitters, broad-area lasers (BALs), operating in the 900…1000 nm wavelength range is presented. Device research and engineering efforts have ensured that BALs remain the most efficient of all light sources, so that in the past 10 years, power conversion efficiency at 20 W continuous wave (CW) output power from BA lasers with a 90…100 μm wide stripe has increased 1.5-fold to 57% (via epitaxial layer design developments), whilst peak CW power per single emitter has increased around 3-fold to 70 W (via scaling of device size), with further scaling underway, for example via use of multi-junction designs. However, the peak achievable CW power conversion efficiency and CW specific output power (defined here as peak output power from a 100 μm stripe diode lasers with a single p-n junction) has changed remarkably little, remaining around 70% and 25 W, respectively, for the past decade. Fortunately, research to understand the limits to peak efficiency and specific output power has also shown progress. Specifically, recent studies indicate that spatial non-uniformity in optical field and temperature play a major role in limiting both power and conversion efficiency. Technological efforts motivated by these discoveries to flatten lateral and longitudinal temperature profiles have successfully increased both power and efficiency. In addition, epitaxial layer designs with very high modal gain successfully reduce threshold current and increase slope at 25 °C to values comparable to those observed at 200 K, offering a path toward the 80% conversion efficiency range currently seen only at these cryogenic temperatures. Overall, whilst operating efficiency and power continue to scale rapidly, a technological path for increased specific power and peak efficiency is also emerging.
期刊介绍:
Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.