V. J. Pandya, K. V. Vadhel, Hepi Ladani, Mahatta Oza, Radhika Rathod, H. O. Jethva
{"title":"掺杂甘氨酸对磷酸二氢铵晶体结构、线性光学特性和离子导电性的影响","authors":"V. J. Pandya, K. V. Vadhel, Hepi Ladani, Mahatta Oza, Radhika Rathod, H. O. Jethva","doi":"10.1007/s10854-024-13769-w","DOIUrl":null,"url":null,"abstract":"<div><p>Pure and glycine-doped ammonium dihydrogen phosphate (ADP) crystals have been grown using the slow solvent evaporation technique at room temperature. An investigation has been conducted to examine the effect of glycine doping on structural, vibrational, and optical properties and conductivity mechanism of pure ADP crystals. The analysis of powder XRD profile has suggested tetragonal structure symmetry with improved crystallite size and reduced lattice strain by glycine doping. The Raman spectrum study has indicated the presence of the characteristic vibrations of PO<sub>4</sub><sup>3-</sup> and NH<sub>4</sub><sup>+</sup> groups at around 925 cm<sup>-1</sup> and 1660 cm<sup>-1</sup>, respectively. The influence of glycine doping on the linear properties of the pure ADP crystal has been determined based on the optical transmittance spectra. The direct optical bandgap increases by glycine doping; it is found to be 6.18 for pure ADP crystal and increases up to 6.25 for glycine-doped ADP crystals. The linear refractive index, optical density, extinction coefficient, optical conductivity, electric susceptibility, optical dielectric constant and loss, inter-band transition strength, volume, and surface energy loss factor have been found to be influenced by glycine doping. The optical study is further extended using the Wemple–DiDomenico single-oscillator model. The frequency-dependent ionic conductivity has been studied and obeys Jonscher’s power law. The modulus study shows that the conductivity relaxation is of non-Debye type. The exponent parameter for the pure ADP crystal is 0.620 and increases up to 0.691 for glycine-doped ADP crystals.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of glycine doping on structure, linear optical properties, and ionic conductivity of ammonium dihydrogen phosphate crystals\",\"authors\":\"V. J. Pandya, K. V. Vadhel, Hepi Ladani, Mahatta Oza, Radhika Rathod, H. O. Jethva\",\"doi\":\"10.1007/s10854-024-13769-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Pure and glycine-doped ammonium dihydrogen phosphate (ADP) crystals have been grown using the slow solvent evaporation technique at room temperature. An investigation has been conducted to examine the effect of glycine doping on structural, vibrational, and optical properties and conductivity mechanism of pure ADP crystals. The analysis of powder XRD profile has suggested tetragonal structure symmetry with improved crystallite size and reduced lattice strain by glycine doping. The Raman spectrum study has indicated the presence of the characteristic vibrations of PO<sub>4</sub><sup>3-</sup> and NH<sub>4</sub><sup>+</sup> groups at around 925 cm<sup>-1</sup> and 1660 cm<sup>-1</sup>, respectively. The influence of glycine doping on the linear properties of the pure ADP crystal has been determined based on the optical transmittance spectra. The direct optical bandgap increases by glycine doping; it is found to be 6.18 for pure ADP crystal and increases up to 6.25 for glycine-doped ADP crystals. The linear refractive index, optical density, extinction coefficient, optical conductivity, electric susceptibility, optical dielectric constant and loss, inter-band transition strength, volume, and surface energy loss factor have been found to be influenced by glycine doping. The optical study is further extended using the Wemple–DiDomenico single-oscillator model. The frequency-dependent ionic conductivity has been studied and obeys Jonscher’s power law. The modulus study shows that the conductivity relaxation is of non-Debye type. The exponent parameter for the pure ADP crystal is 0.620 and increases up to 0.691 for glycine-doped ADP crystals.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 31\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13769-w\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13769-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effect of glycine doping on structure, linear optical properties, and ionic conductivity of ammonium dihydrogen phosphate crystals
Pure and glycine-doped ammonium dihydrogen phosphate (ADP) crystals have been grown using the slow solvent evaporation technique at room temperature. An investigation has been conducted to examine the effect of glycine doping on structural, vibrational, and optical properties and conductivity mechanism of pure ADP crystals. The analysis of powder XRD profile has suggested tetragonal structure symmetry with improved crystallite size and reduced lattice strain by glycine doping. The Raman spectrum study has indicated the presence of the characteristic vibrations of PO43- and NH4+ groups at around 925 cm-1 and 1660 cm-1, respectively. The influence of glycine doping on the linear properties of the pure ADP crystal has been determined based on the optical transmittance spectra. The direct optical bandgap increases by glycine doping; it is found to be 6.18 for pure ADP crystal and increases up to 6.25 for glycine-doped ADP crystals. The linear refractive index, optical density, extinction coefficient, optical conductivity, electric susceptibility, optical dielectric constant and loss, inter-band transition strength, volume, and surface energy loss factor have been found to be influenced by glycine doping. The optical study is further extended using the Wemple–DiDomenico single-oscillator model. The frequency-dependent ionic conductivity has been studied and obeys Jonscher’s power law. The modulus study shows that the conductivity relaxation is of non-Debye type. The exponent parameter for the pure ADP crystal is 0.620 and increases up to 0.691 for glycine-doped ADP crystals.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.