Qilai Wen, Zong-Yang Shen, Haosong Wu, Zhumei Wang, Tao Zeng, Wenqin Luo, Fusheng Song, Yueming Li
{"title":"W/Cr 共掺对 Ca0.94Ce0.06Bi4Ti4O15 高温压电陶瓷电气性能的影响","authors":"Qilai Wen, Zong-Yang Shen, Haosong Wu, Zhumei Wang, Tao Zeng, Wenqin Luo, Fusheng Song, Yueming Li","doi":"10.1007/s10854-024-13847-z","DOIUrl":null,"url":null,"abstract":"<div><p>Ca<sub>0.94</sub>Ce<sub>0.06</sub>Bi<sub>4</sub>Ti<sub>4-<i>x</i></sub>(W<sub>1/3</sub>Cr<sub>2/3</sub>)<sub><i>x</i></sub>O<sub>15</sub> (CCBT-WC<sub><i>x</i></sub>, <i>x</i> = 0.00–0.10) ceramics were prepared by a solid-state sintering method, and the effect of W/Cr co-doping on the structure and electrical properties of the ceramics was systematically investigated. An enhanced piezoelectric constant <i>d</i><sub>33</sub> (22.1 pC/N) was achieved at the optimized composition with<i> x</i> = 0.04, which increased by 35% as compared to that of pure CCBT ceramics due to more effective distortion of the titanium-oxygen octahedron induced by W/Cr co-doping. Moreover, after annealing at 500 °C, the <i>d</i><sub>33</sub> (21.0 pC/N) of CCBT-WC<sub>0.04</sub> ceramics still remained 95% of its initial value, exhibiting excellent annealing thermal stability. In addition to a high Curie temperature (<i>T</i><sub>C</sub> = 768 °C), this ceramic should be very promising for high-temperature sensor applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of W/Cr co-doping on electrical properties of Ca0.94Ce0.06Bi4Ti4O15 high-temperature piezoceramics\",\"authors\":\"Qilai Wen, Zong-Yang Shen, Haosong Wu, Zhumei Wang, Tao Zeng, Wenqin Luo, Fusheng Song, Yueming Li\",\"doi\":\"10.1007/s10854-024-13847-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Ca<sub>0.94</sub>Ce<sub>0.06</sub>Bi<sub>4</sub>Ti<sub>4-<i>x</i></sub>(W<sub>1/3</sub>Cr<sub>2/3</sub>)<sub><i>x</i></sub>O<sub>15</sub> (CCBT-WC<sub><i>x</i></sub>, <i>x</i> = 0.00–0.10) ceramics were prepared by a solid-state sintering method, and the effect of W/Cr co-doping on the structure and electrical properties of the ceramics was systematically investigated. An enhanced piezoelectric constant <i>d</i><sub>33</sub> (22.1 pC/N) was achieved at the optimized composition with<i> x</i> = 0.04, which increased by 35% as compared to that of pure CCBT ceramics due to more effective distortion of the titanium-oxygen octahedron induced by W/Cr co-doping. Moreover, after annealing at 500 °C, the <i>d</i><sub>33</sub> (21.0 pC/N) of CCBT-WC<sub>0.04</sub> ceramics still remained 95% of its initial value, exhibiting excellent annealing thermal stability. In addition to a high Curie temperature (<i>T</i><sub>C</sub> = 768 °C), this ceramic should be very promising for high-temperature sensor applications.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 32\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13847-z\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13847-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effect of W/Cr co-doping on electrical properties of Ca0.94Ce0.06Bi4Ti4O15 high-temperature piezoceramics
Ca0.94Ce0.06Bi4Ti4-x(W1/3Cr2/3)xO15 (CCBT-WCx, x = 0.00–0.10) ceramics were prepared by a solid-state sintering method, and the effect of W/Cr co-doping on the structure and electrical properties of the ceramics was systematically investigated. An enhanced piezoelectric constant d33 (22.1 pC/N) was achieved at the optimized composition with x = 0.04, which increased by 35% as compared to that of pure CCBT ceramics due to more effective distortion of the titanium-oxygen octahedron induced by W/Cr co-doping. Moreover, after annealing at 500 °C, the d33 (21.0 pC/N) of CCBT-WC0.04 ceramics still remained 95% of its initial value, exhibiting excellent annealing thermal stability. In addition to a high Curie temperature (TC = 768 °C), this ceramic should be very promising for high-temperature sensor applications.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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