Shiju Yang, Libing Qian, Bo Zhang, Tingting Wang, Yunfei Li
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Following EBI treatment, the crystalline characteristics of Bi<sub>2</sub>O<sub>3</sub>–I and the concentration of oxygen vacancies (OVs) exhibited a significant improvement, thereby augmenting the material's conductivity. Because the positively charged OVs can quickly attract OH<sup>−</sup> from the electrolyte to the electrode surface, thereby accelerating the REDOX reaction, the current control mechanism of Bi<sub>2</sub>O<sub>3</sub>–I is partially derived from a surface-controlled pseudo-capacitance process. The irradiated Bi<sub>2</sub>O<sub>3</sub>-I electrode demonstrated superior capacitance (990 F<sup>−1</sup> at 2 A g<sup>−1</sup>), enhanced rate performance (585 F<sup>−1</sup> at 50 A g<sup>−1</sup>), and remarkable cycling stability (83% retention after 4000 cycles).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of the electrochemical performance of Bi2O3 by electron beam irradiation\",\"authors\":\"Shiju Yang, Libing Qian, Bo Zhang, Tingting Wang, Yunfei Li\",\"doi\":\"10.1007/s10854-024-13830-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The method of preparation is a critical factor affecting the structure and properties of Bi<sub>2</sub>O<sub>3</sub> material. 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引用次数: 0
摘要
制备方法是影响 Bi2O3 材料结构和性能的关键因素。在这项工作中,利用铋基金属有机框架(Bi-MOF)作为前驱体,通过煅烧法(记为 Bi2O3-C)和水热法(记为 Bi2O3-H)合成了 Bi2O3。作为超级电容器的电极材料,Bi2O3-H 表现出卓越的速率性能(50 A g-1 时为 515 F g-1)和显著的循环稳定性(4000 次循环后保持率为 74%)。随后,Bi2O3-H 通过电子束辐照(EBI)进行了进一步处理,得到了被命名为 Bi2O3-I 的样品。经过电子束辐照处理后,Bi2O3-I 的结晶特性和氧空位(OVs)浓度都有了显著改善,从而提高了材料的导电性。由于带正电荷的氧空位能迅速将电解质中的 OH- 吸引到电极表面,从而加速 REDOX 反应,因此 Bi2O3-I 的电流控制机制部分源于表面控制的伪电容过程。经过辐照的 Bi2O3-I 电极显示出卓越的电容(2 A g-1 时为 990 F-1)、更高的速率性能(50 A g-1 时为 585 F-1)和显著的循环稳定性(4000 次循环后保持率为 83%)。
Improvement of the electrochemical performance of Bi2O3 by electron beam irradiation
The method of preparation is a critical factor affecting the structure and properties of Bi2O3 material. In this work, Bi2O3 was synthesized through calcination (denoted as Bi2O3–C) and hydrothermal methods (denoted as Bi2O3–H), utilizing bismuth-based metal–organic framework (Bi–MOF) as the precursor. As an electrode material for supercapacitors, Bi2O3–H demonstrated outstanding rate performance (515 F g−1 at 50 A g−1) and remarkable cycle stability (74% retention after 4000 cycles). Subsequently, the Bi2O3-H underwent further processing through electron beam irradiation (EBI), resulting in a sample designated as Bi2O3–I. Following EBI treatment, the crystalline characteristics of Bi2O3–I and the concentration of oxygen vacancies (OVs) exhibited a significant improvement, thereby augmenting the material's conductivity. Because the positively charged OVs can quickly attract OH− from the electrolyte to the electrode surface, thereby accelerating the REDOX reaction, the current control mechanism of Bi2O3–I is partially derived from a surface-controlled pseudo-capacitance process. The irradiated Bi2O3-I electrode demonstrated superior capacitance (990 F−1 at 2 A g−1), enhanced rate performance (585 F−1 at 50 A g−1), and remarkable cycling stability (83% retention after 4000 cycles).
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.