Gunjan Mahajan, M. V. V. K. Srinivas Prasad, K. Swapna, K. Seshulatha, M. Venkateswarulu, Sk. Mahamuda, A. S. Rao
{"title":"掺杂钐离子对氟硼酸铋锑玻璃电气和光学特性的影响","authors":"Gunjan Mahajan, M. V. V. K. Srinivas Prasad, K. Swapna, K. Seshulatha, M. Venkateswarulu, Sk. Mahamuda, A. S. Rao","doi":"10.1007/s10854-024-13794-9","DOIUrl":null,"url":null,"abstract":"<div><p>The traditional melt quenching method is used to synthesize the various trivalent samarium ion concentrations doped Bismuth-Antimony-Fluoroborate glasses (BiSFB). Physical, structural, spectroscopic, and electrical properties of the prepared glasses are examined. X-ray diffraction (XRD) and FTIR spectra were used to analyze the amorphous nature and functional groups present in the prepared glasses. Judd–Ofelt (JO) intensity parameters Ω<sub>2</sub>, Ω<sub>4</sub>, and Ω<sub>6</sub> follow the trend Ω<sub>4</sub> > Ω<sub>6</sub> > Ω<sub>2</sub> for all concentrations. Radiative parameters for the fluorescent levels of Sm<sup>3+</sup> ions in BiSFB glasses are calculated using JO parameters. The PL spectra show three emission bands at 562, 599, and 646 nm. The effective bandwidth and stimulated emission cross sections have relatively high values for 0.5 mol% concentration of Sm<sup>3+</sup> ion for <sup>4</sup>G<sub>5/2</sub> → <sup>6</sup>H<sub>7/2</sub> transition among all the prepared glasses. Relatively high quantum efficiency calculated via decay curves shows 0.5 mol% concentration of Sm<sup>3+</sup> ion to be optimum for solid-state lighting and optoelectronic devices. CIE color coordinates also confirm the red and orange-red emission for the prepared glasses. The dielectric properties (dielectric constant (<i>ɛ</i>′), dielectric loss (<i>ɛ</i>″)), Nyquist plot, electrical ac conductivity (<i>σ</i><sub>ac</sub>), and dc conductivity of these glasses with variation in frequency have also been studied at the ambient temperature. With an increase in applied frequency, particularly in the high-frequency region, the ac and dc conductivities are increased. Analysis of optical and electrical properties suggests the application of present glasses in optoelectronic devices and solid-state ionic materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of samarium ions doping on electrical and optical properties of bismuth antimony fluoroborate glasses\",\"authors\":\"Gunjan Mahajan, M. V. V. K. Srinivas Prasad, K. Swapna, K. Seshulatha, M. Venkateswarulu, Sk. Mahamuda, A. S. Rao\",\"doi\":\"10.1007/s10854-024-13794-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The traditional melt quenching method is used to synthesize the various trivalent samarium ion concentrations doped Bismuth-Antimony-Fluoroborate glasses (BiSFB). Physical, structural, spectroscopic, and electrical properties of the prepared glasses are examined. X-ray diffraction (XRD) and FTIR spectra were used to analyze the amorphous nature and functional groups present in the prepared glasses. Judd–Ofelt (JO) intensity parameters Ω<sub>2</sub>, Ω<sub>4</sub>, and Ω<sub>6</sub> follow the trend Ω<sub>4</sub> > Ω<sub>6</sub> > Ω<sub>2</sub> for all concentrations. Radiative parameters for the fluorescent levels of Sm<sup>3+</sup> ions in BiSFB glasses are calculated using JO parameters. The PL spectra show three emission bands at 562, 599, and 646 nm. The effective bandwidth and stimulated emission cross sections have relatively high values for 0.5 mol% concentration of Sm<sup>3+</sup> ion for <sup>4</sup>G<sub>5/2</sub> → <sup>6</sup>H<sub>7/2</sub> transition among all the prepared glasses. Relatively high quantum efficiency calculated via decay curves shows 0.5 mol% concentration of Sm<sup>3+</sup> ion to be optimum for solid-state lighting and optoelectronic devices. CIE color coordinates also confirm the red and orange-red emission for the prepared glasses. The dielectric properties (dielectric constant (<i>ɛ</i>′), dielectric loss (<i>ɛ</i>″)), Nyquist plot, electrical ac conductivity (<i>σ</i><sub>ac</sub>), and dc conductivity of these glasses with variation in frequency have also been studied at the ambient temperature. With an increase in applied frequency, particularly in the high-frequency region, the ac and dc conductivities are increased. Analysis of optical and electrical properties suggests the application of present glasses in optoelectronic devices and solid-state ionic materials.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 32\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13794-9\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13794-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Influence of samarium ions doping on electrical and optical properties of bismuth antimony fluoroborate glasses
The traditional melt quenching method is used to synthesize the various trivalent samarium ion concentrations doped Bismuth-Antimony-Fluoroborate glasses (BiSFB). Physical, structural, spectroscopic, and electrical properties of the prepared glasses are examined. X-ray diffraction (XRD) and FTIR spectra were used to analyze the amorphous nature and functional groups present in the prepared glasses. Judd–Ofelt (JO) intensity parameters Ω2, Ω4, and Ω6 follow the trend Ω4 > Ω6 > Ω2 for all concentrations. Radiative parameters for the fluorescent levels of Sm3+ ions in BiSFB glasses are calculated using JO parameters. The PL spectra show three emission bands at 562, 599, and 646 nm. The effective bandwidth and stimulated emission cross sections have relatively high values for 0.5 mol% concentration of Sm3+ ion for 4G5/2 → 6H7/2 transition among all the prepared glasses. Relatively high quantum efficiency calculated via decay curves shows 0.5 mol% concentration of Sm3+ ion to be optimum for solid-state lighting and optoelectronic devices. CIE color coordinates also confirm the red and orange-red emission for the prepared glasses. The dielectric properties (dielectric constant (ɛ′), dielectric loss (ɛ″)), Nyquist plot, electrical ac conductivity (σac), and dc conductivity of these glasses with variation in frequency have also been studied at the ambient temperature. With an increase in applied frequency, particularly in the high-frequency region, the ac and dc conductivities are increased. Analysis of optical and electrical properties suggests the application of present glasses in optoelectronic devices and solid-state ionic materials.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.