钆含量对电沉积锰-铁-钆-铜薄膜的结构、形态和光学特性的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-14 DOI:10.1007/s10854-024-13851-3
T. Sivasakthirani, P. Sathishkumar, R. Suman, V. Balasubramanian
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引用次数: 0

摘要

软磁材料在各种设备中发挥着重要作用,是现代电气工程和电子学中不可或缺的材料。本研究采用电沉积法合成了 Mn0.1Fe0.1Gdx 薄膜,并系统地改变了 Gd 的浓度,以研究其对薄膜特性的影响。随着 Gd 含量的增加,薄膜的磁性能得到增强,特别是其低矫顽力,使其非常适合软磁应用。表面形貌分析表明,随着钆含量的增加,薄膜中出现了菜花状的团聚体。光学特性也受 Gd 含量的影响,表现为在可见光区域的强吸收,这使得这些薄膜在需要磁性和光学功能的应用中具有潜在的用途。XRD 图谱证实了薄膜的晶体结构,而 EDX 分析则验证了薄膜中的元素组成和钆的均匀分布。
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Influence of Gd content on the structural, morphological, and optical properties of electrodeposited Mn–Fe–Gd/Cu thin Films

Soft magnetic materials play a crucial role in various devices, making them indispensable in modern electrical engineering and electronics. In this work, Mn0.1Fe0.1Gdx thin films were synthesized through an electrodeposition method, with the Gd concentration systematically varied to study its effect on the films properties. As the Gd content increased, the magnetic properties of the films were enhanced, particularly in terms of their low coercivity, making them highly suitable for soft magnetic applications. Surface morphology analysis showed cauliflower-like agglomerates, which grew larger as the Gd content increased. The optical properties were also influenced by the Gd content, as demonstrated by strong absorption in the visible region, making these films potentially useful for applications requiring both magnetic and optical functionalities. The XRD patterns confirmed the crystalline structure of the films, while EDX analysis validated the elemental composition and uniform distribution of Gd within the films.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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