ZnO@xSrFe12O19 纳米复合材料的电和中子衰减特性评估

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-14 DOI:10.1007/s10854-024-13850-4
A. A. Azab, Emad M. Ahmed, A. M. Reda, Essam M. Abdel‑Fattah, Nehal Mohamed
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引用次数: 0

摘要

纳米复合材料具有广泛的应用领域,有可能给各行各业带来革命性的变化。通过精心选择基体材料和纳米粒子,可以制造出具有定制特性的材料,从而满足特定需求并有效解决各种应用中遇到的难题。我们采用共沉淀法合成了氧化锌(ZnO)、锶铁氧体(SrFe12O19)及其纳米复合材料 ZnO/xSFO(x = 1%、3% 和 5%)。X 射线衍射证实了 ZnO、SFO 及其纳米复合材料的晶体结构,ZnO 的结晶尺寸为 27 nm,纳米复合材料的结晶尺寸为 41 nm。高分辨率透射电子分析表明,ZnO、SFO 和 ZnO/5%SFO 的粒径分别为 25 nm、9 nm 和 47 nm,为半球形团聚多晶颗粒。介电特性和交流电导率随频率(4-8 MHz)和温度(30-180 °C)的变化而变化。室温下获得的结果表明,介电常数、介电损耗因子和交流电导率随着 SFO 含量的增加而增强,在 SFO 含量为 3% 时达到峰值。研究了入射中子在 10-5 eV 至 20 MeV 能量范围内的质量衰减系数,以评估制备的样品作为中子屏蔽材料的能力。与其他研究样品相比,SFO 样品具有更高的中子衰减能力。研究表明,在 1 eV 至 1 MeV 中子能量范围内,所有研究材料的总质量衰减系数主要来自弹性相互作用。结果表明,氧化锌中的 SFO 浓度越高,低能量时的吸收和高能量时的弹性散射就会略有增加。此外,结果表明,样品对 2 MeV 至 12 MeV 范围内快中子的衰减系数为 0.14 cm-1,与各种文献中报道的许多屏蔽材料相比,这是一个明显较高的值。
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Evaluation of the electric and neutron attenuation properties of ZnO@xSrFe12O19 nanocomposites

Nanocomposites offer a wide range of applications and have the potential to revolutionize various industries. Through carefully selection of the matrix material and nanoparticles, it becomes possible to fabricate materials that possess customized properties, hence, tailoring to specific needs and efficiently addressing challenges encountered in various applications. Zinc oxide (ZnO), strontium ferrite (SrFe12O19), and their nanocomposites ZnO/xSFO (x = 1%, 3%, and 5%) have been synthesized using the co-precipitation method. X-ray diffraction assures the crystal structure of ZnO, SFO, and their nanocomposites, with crystallite size of 27 nm for ZnO and 41 nm for nanocomposites. High-resolution transmission electron analysis shows the semi-spherical agglomerated polycrystalline particles with particle size 25 nm, 9 nm, and 47 nm for ZnO, SFO, and ZnO/5%SFO, respectively. The dielectric characteristics and ac conductivity were examined as a function of frequency (4–8 MHz) and at different temperatures ranging from 30 to 180 °C. The results obtained at room temperature show the dielectric constant, dielectric loss factor, and ac conductivity are enhanced by increasing SFO content, reaching their peak at a concentration of 3% SFO. The mass attenuation coefficient of incident neutrons in the energy range from 10–5 eV to 20 MeV was studied to evaluate the ability of the prepared samples as neutron-shielding materials. SFO sample has higher neutron attenuation capability than other investigated samples. The study indicates that the total mass attenuation coefficient in the 1 eV to 1 MeV neutron energy range primarily results from elastic interactions for all materials under investigation. The results indicate that higher SFO concentrations in ZnO result in a slight increase in absorption at low energies and in elastic scattering at higher energies. Furthermore, the results indicated that the attenuation coefficient of the samples for fast neutrons in the range of 2 MeV to 12 MeV is \(\approx\) 0.14 cm−1, a notably high value compared to many shielding materials reported in various literature.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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