基于相界和无序工程的 (Na0.5K0.5)1-xAgxNb1-xTaxO3 中铁电性的调节

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-14 DOI:10.1007/s10854-024-13842-4
G. B. Yu, X. F. Su, X. X. Huang, C. M. Zhu, L. G. Wang, Z. H. Guan, G. N. Yuan, K. P. Fu
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引用次数: 0

摘要

铌酸钾钠基铁电材料具有出色的铁电和压电特性,是铌基包晶石的潜在替代品。在我们之前的研究中,(Na0.5K0.5)1-xAgxNb1-xTaxO3 在室温下具有正方相和四方相共存的结构,成功地调节了各种极化特性。然而,尽管 x = 0.075 样品具有出色的压电和铁电特性,但其表现出的巨大矫顽力场对极化构成了挑战。要解决这个问题,还需要进一步的研究。本研究将 SrTiO3 作为第二相引入 (Na0.5K0.5)0.925Ag0.075Nb0.925Ta0.075O3 中,有效地调节了微观结构和无序性。此外,利用相界和无序工程的协同效应,铁电特性在室温下得到了很好的调控。这些结果为调节无铅铁电材料的铁电特性提供了宝贵的方法和指导。
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Regulation of ferroelectricity in (Na0.5K0.5)1-xAgxNb1-xTaxO3 based on phase boundary and disorder engineering

Potassium sodium niobate-based ferroelectric materials are potential alternatives to Pb-based perovskites due to their outstanding ferroelectric and piezoelectric properties. In our previous work, (Na0.5K0.5)1-xAgxNb1-xTaxO3 was constructed with a coexistence of orthorhombic and tetragonal phases at room temperature, successfully regulating various polarization properties. However, despite the x = 0.075 sample's excellent piezoelectric and ferroelectric characteristics, the significant coercive field it exhibits poses a challenge for polarization. Further investigation is needed to address this issue. This study introduces SrTiO3 as a second phase into (Na0.5K0.5)0.925Ag0.075Nb0.925Ta0.075O3, effectively regulating the microstructure and disorder. Moreover, leveraging the synergistic effect of phase boundary and disorder engineering, the ferroelectric properties are well modulated at room temperature. These results provide valuable methods and guidance for regulating ferroelectric properties in lead-free ferroelectrics.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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