Ayten Ateş, Khawla Ben Brahim, Abderrazek Oueslati, Mohamed Gargouri
{"title":"V2O5 负载对二氧化钛介电性能和交流电导率的影响","authors":"Ayten Ateş, Khawla Ben Brahim, Abderrazek Oueslati, Mohamed Gargouri","doi":"10.1007/s10854-024-13811-x","DOIUrl":null,"url":null,"abstract":"<div><p>The interaction between TiO<sub>2</sub> and V<sub>2</sub>O<sub>5</sub> can not only improve the physico-chemical properties of the material but also the dielectric and conductive properties of the material. For this purpose, TiO<sub>2</sub> samples with 5, 7, and 10 wt% V<sub>2</sub>O<sub>5</sub> were prepared by the impregnation method to investigate the dielectric properties and AC conductivity. The phase composition and morphology of the V<sub>2</sub>O<sub>5</sub>/TiO<sub>2</sub> samples were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM)-scanning transmission electron microscope (STEM). Regardless of the vanadium content, the samples exhibit non-spherical structures and particles with size in the range of 60–200 nm. The small V<sub>2</sub>O<sub>5</sub> peaks in XRD were detected at 7.0 and 10 wt% V<sub>2</sub>O<sub>5</sub>. In addition, the specific surface area for 5 and 7 wt% V<sub>2</sub>O<sub>5</sub> was determined to be 9.2 m<sup>2</sup>/g, but at 10 wt% V<sub>2</sub>O<sub>5</sub> the surface area of the sample decreases to 7.5 m<sup>2</sup>/g as the titanium dioxide pores are filled by vanadium. The DR–UV–Vis spectra of V<sub>2</sub>O<sub>5</sub>/TiO<sub>2</sub> samples showed that the sample with 5 wt% V<sub>2</sub>O<sub>5</sub> has isolated tetrahedrally coordinated V<sup>5+</sup> species and increasing the V<sub>2</sub>O<sub>5</sub> loading leads to the formation of octohedrally coordinated V<sup>5+</sup> species in V<sub>2</sub>O<sub>5</sub> clusters. Comparison of the Raman spectra of V<sub>2</sub>O<sub>5</sub>/TiO<sub>2</sub> and TiO<sub>2</sub> samples showed the formation of α-V<sub>2</sub>O<sub>5</sub> on the TiO<sub>2</sub>. In addition, a detailed analysis of the Nyquist diagrams shows how sensitively the electrical properties of the materials react to changes in temperature and frequency. Jonscher’s power law is used to analyze alternating current and conductivity, and it is found that the fluctuation of the exponent “<i>s</i>” adequately describes the conduction mechanism and agrees with CBH models. As the TiO<sub>2</sub> concentration increases, the value of the activation energy generated decreases. The higher presence of Ti<sup>4+</sup> ions due to the increase in molar volume is the cause of this increase in charge carrier mobility. The effect of the grain and grain boundary on the overall impedance is revealed by a dielectric study, which also confirms that the combination of titanium dioxide and vanadium oxide nanoparticles improves the dielectric and AC conductivity of the samples.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of V2O5 loading on the dielectric properties and AC conductivity of TiO2\",\"authors\":\"Ayten Ateş, Khawla Ben Brahim, Abderrazek Oueslati, Mohamed Gargouri\",\"doi\":\"10.1007/s10854-024-13811-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The interaction between TiO<sub>2</sub> and V<sub>2</sub>O<sub>5</sub> can not only improve the physico-chemical properties of the material but also the dielectric and conductive properties of the material. For this purpose, TiO<sub>2</sub> samples with 5, 7, and 10 wt% V<sub>2</sub>O<sub>5</sub> were prepared by the impregnation method to investigate the dielectric properties and AC conductivity. The phase composition and morphology of the V<sub>2</sub>O<sub>5</sub>/TiO<sub>2</sub> samples were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM)-scanning transmission electron microscope (STEM). Regardless of the vanadium content, the samples exhibit non-spherical structures and particles with size in the range of 60–200 nm. The small V<sub>2</sub>O<sub>5</sub> peaks in XRD were detected at 7.0 and 10 wt% V<sub>2</sub>O<sub>5</sub>. In addition, the specific surface area for 5 and 7 wt% V<sub>2</sub>O<sub>5</sub> was determined to be 9.2 m<sup>2</sup>/g, but at 10 wt% V<sub>2</sub>O<sub>5</sub> the surface area of the sample decreases to 7.5 m<sup>2</sup>/g as the titanium dioxide pores are filled by vanadium. The DR–UV–Vis spectra of V<sub>2</sub>O<sub>5</sub>/TiO<sub>2</sub> samples showed that the sample with 5 wt% V<sub>2</sub>O<sub>5</sub> has isolated tetrahedrally coordinated V<sup>5+</sup> species and increasing the V<sub>2</sub>O<sub>5</sub> loading leads to the formation of octohedrally coordinated V<sup>5+</sup> species in V<sub>2</sub>O<sub>5</sub> clusters. Comparison of the Raman spectra of V<sub>2</sub>O<sub>5</sub>/TiO<sub>2</sub> and TiO<sub>2</sub> samples showed the formation of α-V<sub>2</sub>O<sub>5</sub> on the TiO<sub>2</sub>. In addition, a detailed analysis of the Nyquist diagrams shows how sensitively the electrical properties of the materials react to changes in temperature and frequency. Jonscher’s power law is used to analyze alternating current and conductivity, and it is found that the fluctuation of the exponent “<i>s</i>” adequately describes the conduction mechanism and agrees with CBH models. As the TiO<sub>2</sub> concentration increases, the value of the activation energy generated decreases. The higher presence of Ti<sup>4+</sup> ions due to the increase in molar volume is the cause of this increase in charge carrier mobility. The effect of the grain and grain boundary on the overall impedance is revealed by a dielectric study, which also confirms that the combination of titanium dioxide and vanadium oxide nanoparticles improves the dielectric and AC conductivity of the samples.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 32\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13811-x\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13811-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Influence of V2O5 loading on the dielectric properties and AC conductivity of TiO2
The interaction between TiO2 and V2O5 can not only improve the physico-chemical properties of the material but also the dielectric and conductive properties of the material. For this purpose, TiO2 samples with 5, 7, and 10 wt% V2O5 were prepared by the impregnation method to investigate the dielectric properties and AC conductivity. The phase composition and morphology of the V2O5/TiO2 samples were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM)-scanning transmission electron microscope (STEM). Regardless of the vanadium content, the samples exhibit non-spherical structures and particles with size in the range of 60–200 nm. The small V2O5 peaks in XRD were detected at 7.0 and 10 wt% V2O5. In addition, the specific surface area for 5 and 7 wt% V2O5 was determined to be 9.2 m2/g, but at 10 wt% V2O5 the surface area of the sample decreases to 7.5 m2/g as the titanium dioxide pores are filled by vanadium. The DR–UV–Vis spectra of V2O5/TiO2 samples showed that the sample with 5 wt% V2O5 has isolated tetrahedrally coordinated V5+ species and increasing the V2O5 loading leads to the formation of octohedrally coordinated V5+ species in V2O5 clusters. Comparison of the Raman spectra of V2O5/TiO2 and TiO2 samples showed the formation of α-V2O5 on the TiO2. In addition, a detailed analysis of the Nyquist diagrams shows how sensitively the electrical properties of the materials react to changes in temperature and frequency. Jonscher’s power law is used to analyze alternating current and conductivity, and it is found that the fluctuation of the exponent “s” adequately describes the conduction mechanism and agrees with CBH models. As the TiO2 concentration increases, the value of the activation energy generated decreases. The higher presence of Ti4+ ions due to the increase in molar volume is the cause of this increase in charge carrier mobility. The effect of the grain and grain boundary on the overall impedance is revealed by a dielectric study, which also confirms that the combination of titanium dioxide and vanadium oxide nanoparticles improves the dielectric and AC conductivity of the samples.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.