V2O5 负载对二氧化钛介电性能和交流电导率的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-14 DOI:10.1007/s10854-024-13811-x
Ayten Ateş, Khawla Ben Brahim, Abderrazek Oueslati, Mohamed Gargouri
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引用次数: 0

摘要

TiO2 和 V2O5 之间的相互作用不仅能改善材料的物理化学特性,还能改善材料的介电性能和导电性能。为此,采用浸渍法制备了含有 5、7 和 10 wt% V2O5 的 TiO2 样品,以研究其介电性能和交流导电性能。通过 X 射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)-扫描透射电子显微镜(STEM)对 V2O5/TiO2 样品的相组成和形貌进行了表征。无论钒含量多少,样品都呈现出非球形结构,颗粒大小在 60-200 纳米之间。在 7.0 和 10 wt% V2O5 时,XRD 中检测到了较小的 V2O5 峰。此外,5 和 7 wt% V2O5 的比表面积被测定为 9.2 m2/g,但在 10 wt% V2O5 时,由于二氧化钛孔隙被钒填充,样品的比表面积降至 7.5 m2/g。V2O5/TiO2 样品的 DR-UV-Vis 光谱显示,V2O5 含量为 5 wt% 的样品具有孤立的四面体配位 V5+ 物种,增加 V2O5 含量会导致 V2O5 簇中形成八面体配位 V5+ 物种。对比 V2O5/TiO2 和 TiO2 样品的拉曼光谱发现,在 TiO2 上形成了 α-V2O5。此外,对奈奎斯特图的详细分析显示了材料的电特性对温度和频率变化的敏感反应。研究使用琼舍尔幂律分析交流电和导电性,发现指数 "s "的波动充分描述了传导机制,并与 CBH 模型一致。随着 TiO2 浓度的增加,产生的活化能值降低。由于摩尔体积的增加,Ti4+ 离子的存在量增加,这是电荷载流子迁移率增加的原因。电介质研究揭示了晶粒和晶界对整体阻抗的影响,也证实了二氧化钛和氧化钒纳米粒子的结合提高了样品的电介质和交流导电性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Influence of V2O5 loading on the dielectric properties and AC conductivity of TiO2

The interaction between TiO2 and V2O5 can not only improve the physico-chemical properties of the material but also the dielectric and conductive properties of the material. For this purpose, TiO2 samples with 5, 7, and 10 wt% V2O5 were prepared by the impregnation method to investigate the dielectric properties and AC conductivity. The phase composition and morphology of the V2O5/TiO2 samples were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM)-scanning transmission electron microscope (STEM). Regardless of the vanadium content, the samples exhibit non-spherical structures and particles with size in the range of 60–200 nm. The small V2O5 peaks in XRD were detected at 7.0 and 10 wt% V2O5. In addition, the specific surface area for 5 and 7 wt% V2O5 was determined to be 9.2 m2/g, but at 10 wt% V2O5 the surface area of the sample decreases to 7.5 m2/g as the titanium dioxide pores are filled by vanadium. The DR–UV–Vis spectra of V2O5/TiO2 samples showed that the sample with 5 wt% V2O5 has isolated tetrahedrally coordinated V5+ species and increasing the V2O5 loading leads to the formation of octohedrally coordinated V5+ species in V2O5 clusters. Comparison of the Raman spectra of V2O5/TiO2 and TiO2 samples showed the formation of α-V2O5 on the TiO2. In addition, a detailed analysis of the Nyquist diagrams shows how sensitively the electrical properties of the materials react to changes in temperature and frequency. Jonscher’s power law is used to analyze alternating current and conductivity, and it is found that the fluctuation of the exponent “s” adequately describes the conduction mechanism and agrees with CBH models. As the TiO2 concentration increases, the value of the activation energy generated decreases. The higher presence of Ti4+ ions due to the increase in molar volume is the cause of this increase in charge carrier mobility. The effect of the grain and grain boundary on the overall impedance is revealed by a dielectric study, which also confirms that the combination of titanium dioxide and vanadium oxide nanoparticles improves the dielectric and AC conductivity of the samples.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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