摩尔浓度对通过喷雾热解沉积在柔性塑料基底上的 CdS 薄膜的光学和结构特性的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-13 DOI:10.1007/s10854-024-13839-z
M. G. Faraj, Hawbash H. Karim, Aryan F. Qader, Ibrahim Nazem Qader, Ronak Taher Ali
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引用次数: 0

摘要

由高温聚合物基底制成的太阳能电池基底可应用于各种类型的薄膜设备。研究不同基底如何影响半导体薄膜的特性至关重要。在这项研究中,利用化学喷雾热解(CSP)技术在聚酰亚胺(PI)塑料基底上涂覆了一层硫化镉(CdS)薄膜。镀膜过程中使用了不同的前驱体溶液,摩尔浓度分别为 0.1、0.2、0.3 和 0.4 M。X 射线衍射分析结果表明,CdS 结构的相位发展正确。结果表明,晶体大小与摩尔浓度直接相关,浓度越高,形成的晶体越大。较大的晶体会降低晶界密度,从而影响薄膜的电气和机械性能。此外,在 CdS 层中还观察到六边形结构。随着摩尔浓度的升高,CdS 薄膜的光带隙值从 2.16 eV 增加到 2.21 eV。
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Effect of molarity on the optical and structural properties of CdS thin films deposited by spray pyrolysis on flexible plastic substrates

Solar cell substrates made from high-temperature polymer bases can be applied to various types of thin-film devices. Studying how different substrates impact the properties of semiconductor films is crucial. In this research, chemical spray pyrolysis (CSP) was utilized to coat thin layers of cadmium sulfide (CdS) on polyimide (PI) plastic bases. The coating process involved using distinct precursor solutions with molar concentrations of 0.1, 0.2, 0.3, and 0.4 M. X-ray diffraction (XRD) analysis was applied to assess the crystal structural characteristics. The XRD findings demonstrated the correct phase development in the CdS structure. The outcomes revealed that the crystallite size was directly related to the molarity concentration, with larger crystals forming at higher concentrations. Larger crystallites can lower grain boundary density, which can affect the film’s electrical and mechanical properties. Furthermore, a hexagonal structure was observed in the CdS layers. The optical band gap values of the CdS thin films increased from 2.16 to 2.21 eV as the molarity concentrations were elevated.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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